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參數(shù)資料
型號(hào): AD2S1210ASTZ
廠商: Analog Devices Inc
文件頁數(shù): 33/36頁
文件大?。?/td> 0K
描述: IC CONV R/D 10-16BIT 48-LQFP
標(biāo)準(zhǔn)包裝: 1
類型: R/D 轉(zhuǎn)換器
分辨率(位): 10,12,14,16 b
數(shù)據(jù)接口: 串行,并聯(lián)
電壓電源: 模擬和數(shù)字
電源電壓: 4.75 V ~ 5.25 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 48-LQFP
供應(yīng)商設(shè)備封裝: 48-LQFP(7x7)
包裝: 托盤
產(chǎn)品目錄頁面: 790 (CN2011-ZH PDF)
配用: EVAL-AD2S1210EDZ-ND - BOARD EVAL AD2S1210
AD2S1210
Rev. A | Page 6 of 36
TIMING SPECIFICATIONS
AVDD = DVDD = 5.0 V ± 5%, TA = TMIN to TMAX, unless otherwise noted.1
Table 2.
Parameter
Description
Limit at TMIN, TMAX
Unit
fCLKIN
Frequency of clock input
6.144
MHz min
10.24
MHz max
tCK
Clock period ( = 1/fCLKIN)
98
ns min
163
ns max
t1
A0 and A1 setup time before RD/CS low
2
ns min
t2
Delay CS falling edge to WR/FSYNC rising edge
22
ns min
t3
Address/data setup time during a write cycle
3
ns min
t4
Address/data hold time during a write cycle
2
ns min
t5
Delay WR/FSYNC rising edge to CS rising edge
2
ns min
t6
Delay CS rising edge to CS falling edge
10
ns min
t7
Delay between writing address and writing data
2 × tCK + 20
ns min
t8
A0 and A1 hold time after WR/FSYNC rising edge
2
ns min
t9
Delay between successive write cycles
6 × tCK + 20
ns min
t10
Delay between rising edge of WR/FSYNC and falling edge of RD
2
ns min
t11
Delay CS falling edge to RD falling edge
2
ns min
t12
Enable delay RD low to data valid in configuration mode
VDRIVE = 4.5 V to 5.25 V
37
ns min
VDRIVE = 2.7 V to 3.6 V
25
ns min
VDRIVE = 2.3 V to 2.7 V
30
ns min
t13
RD rising edge to CS rising edge
2
ns min
t14A
Disable delay RD high to data high-Z
16
ns min
t14B
Disable delay CS high to data high-Z
16
ns min
t15
Delay between rising edge of RD and falling edge of WR/FSYNC
2
ns min
t16
SAMPLE pulse width
2 × tCK + 20
ns min
t17
Delay from SAMPLE before RD/CS low
6 × tCK + 20
ns min
t18
Hold time RD before RD low
2
ns min
t19
Enable delay RD/CS low to data valid
VDRIVE = 4.5 V to 5.25 V
17
ns min
VDRIVE = 2.7 V to 3.6 V
21
ns min
VDRIVE = 2.3 V to 2.7 V
33
ns min
t20
RD pulse width
6
ns min
t21
A0 and A1 set time to data valid when RD/CS low
VDRIVE = 4.5 V to 5.25 V
36
ns min
VDRIVE = 2.7 V to 3.6 V
37
ns min
VDRIVE = 2.3 V to 2.7 V
29
ns min
t22
Delay WR/FSYNC falling edge to SCLK rising edge
3
ns min
t23
Delay WR/FSYNC falling edge to SDO release from high-Z
VDRIVE = 4.5 V to 5.25 V
16
ns min
VDRIVE = 2.7 V to 3.6 V
26
ns min
VDRIVE = 2.3 V to 2.7 V
29
ns min
t24
Delay SCLK rising edge to DBx valid
VDRIVE = 4.5 V to 5.25 V
24
ns min
VDRIVE = 2.7 V to 3.6 V
18
ns min
VDRIVE = 2.3 V to 2.7 V
32
ns min
t25
SCLK high time
0.4 × tSCLK
ns min
t26
SCLK low time
0.4 × tSCLK
ns min
t27
SDI setup time prior to SCLK falling edge
3
ns min
t28
SDI hold time after SCLK falling edge
2
ns min
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