參數(shù)資料
型號: AD22151YR
廠商: Analog Devices, Inc.
元件分類: 霍爾效應(yīng)傳感器
英文描述: CAP .0012UF 1600V METAL POLYPRO
中文描述: 線性輸出磁場傳感器
文件頁數(shù): 3/8頁
文件大?。?/td> 118K
代理商: AD22151YR
AD22151
–3–
REV. 0
PIN CONFIGURAT ION
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
AREA OF SENSITIVITY*
TC1
TC2
TC3
GND
V
CC
REF
GAIN
OUTPUT
AD22151
(Not to Scale)
8
7
6
5
1
2
3
4
* SHADED AREA REPRESENTS
MAGNETIC FIELD AREA OF
SENSITIVITY (20MILS
3
20MILS)
POSITIVE B FIELD INTO TOP OF
PACKAGE RESULTS IN A POSITIVE
VOLTAGE RESPONSE
PIN FUNCT ION DE SCRIPT IONS
Pin No.
Description
Connection
1
2
3
4
5
6
7
8
T emperature Compensation 1
T emperature Compensation 2
T emperature Compensation 3
Ground
Output
Gain
Reference
Positive Power Supply
Output
Output
Input/Output
Output
Input
Output
CIRCUIT OPE RAT ION
T he AD22151 consists of epi Hall plate structures located at
the center of the die. T he Hall plates are orthogonally sampled
by commutation switches via a differential amplifier. T he two
amplified Hall signals are synchronously demodulated to pro-
vide a resultant offset cancellation (see Figure 3). T he demodu-
lated signal passes through a noninverting amplifier to provide
final gain and drive capability. T he frequency at which the
output signal is refreshed is 50 kHz.
TEMPERATURE –
8
C
0.005
–0.004
140
–40
120
O
100
80
60
40
20
0
–20
0.004
0
–0.001
–0.002
–0.003
0.003
0.001
0.002
Figure 3. Relative Quiescent Offset vs. Temperature
T E MPE RAT URE DE PE NDE NCIE S
T he uncompensated gain temperature coefficient (G
T CU
) of the
AD22151 is the result of fundamental physical properties asso-
ciated with silicon bulk Hall plate structures. Low doped Hall
plates operated in current bias mode exhibit a temperature
relationship determined by the action of scattering mechanisms
and doping concentration.
T he relative value of sensitivity to magnetic field can be altered
by the application of mechanical force upon silicon. T he mecha-
nism is principally the redistribution of electrons throughout the
“valleys” of the silicon crystal. Mechanical force on the sensor
is attributable to package-induced stress. T he package material
acts to distort the encapsulated silicon altering the Hall cell gain
by
±
2% and G
T CU
by
±
200 ppm.
Figure 4 shows the typical G
T CU
characteristic of the AD22151.
T his is the observable alteration of gain with respect to tempera-
ture with Pin 3 (T C3) held at a constant 2.5 V (uncompensated).
If a permanent magnet source used in conjunction with the
sensor also displays an intrinsic T C (B
T C
), it will require factor-
ing into the total temperature compensation of the sensor
assembly.
Figures 5 and 6 represent typical overall temperature/gain per-
formance for a sensor and field combination (B
T C
= –200 ppm).
Figure 5 is the total drift in volts over a –40
°
C to +150
°
C tem-
perature range with respect to applied field. Figure 6 represents
typical percentage gain variation from +25
°
C. Figures 7 and 8
show similar data for a B
T C
= –2000 ppm.
TEMPERATURE –
8
C
14
–4
–40
%
10
60
110
160
12
4
2
0
–2
10
6
8
–6
Figure 4. Uncompensated Gain Variation (from +25
°
C) vs.
Temperature
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