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參數(shù)資料
| 型號： | AD1674JR |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | ADC |
| 英文描述： | 12-Bit 100 kSPS A/D Converter |
| 中文描述： | 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28 |
| 封裝： | PLASTIC, SOIC-28 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 255K |
| 代理商： | AD1674JR |
AD1674
REV. C
–6–
ORDE RING GUIDE
INL
(T
MIN
to T
MAX
)
S/(N+D)
(T
MIN
to T
MAX
)
Package
Description
Package
Option
2
Model
1
T emperature Range
AD1674JN
AD1674K N
AD1674JR
AD1674K R
AD1674AR
AD1674BR
AD1674AD
AD1674BD
AD1674T D
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
±
1/2 LSB
±
1 LSB
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
69 dB
70 dB
70 dB
Plastic DIP
Plastic DIP
Plastic SOIC
Plastic SOIC
Plastic SOIC
Plastic SOIC
Ceramic DIP
Ceramic DIP
Ceramic DIP
N-28
N-28
R-28
R-28
R-28
R-28
D-28
D-28
D-28
NOT ES
1
For details on grade and package offerings screened in accordance with MIL-ST D-883, refer to the Analog Devices Military Products Databook or current
AD1674/883B data sheet. SMD is also available.
2
N = Plastic DIP; D = Hermetic Ceramic DIP; R = Plastic SOIC.
T IMING—ST AND-ALONE MODE (F igures 4a and 4b)
J, K, A, B Grades
T yp
T Grade
T yp
Parameter
Symbol
Min
Max
Min
Max
Units
Data Access T ime
Low R/
C
Pulse Width
ST S Delay from R/
C
Data Valid After R/
C
Low
ST S Delay After Data Valid
High R/
C
Pulse Width
t
DDR
t
HRL
t
DS
t
HDR
t
HS
t
HRH
150
150
ns
ns
ns
ns
μ
s
ns
50
50
200
225
25
0.6
150
25
0.6
150
0.8
1.2
0.8
1.2
NOT E
All min and max specifications are guaranteed.
Specifications subject to change without notice.
WARNING!
ESD SENSITIVE DEVICE
C AUT ION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD1674 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. T herefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
DATA
VALID
DATA VALID
HIGH-Z
STS
DB11 – DB0
R/C
_
t
HRL
t
DS
t
C
t
HS
t
HDR
Figure 4a. Stand-Alone Mode Timing Low Pulse for R/
C
DATA
VALID
HIGH-Z
HIGH-Z
STS
DB11 – DB0
R/C
_
t
HRH
t
DS
t
C
t
DDR
t
HDR
t
HL
Figure 4b. Stand-Alone Mode Timing High Pulse for R/
C
ABSOLUT E MAX IMUM RAT INGS*
V
CC
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to + 16.5 V
V
EE
to Digital Common . . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
V
LOGIC
to Digital Common . . . . . . . . . . . . . . . . . . 0 V to +7 V
Analog Common to Digital Common . . . . . . . . . . . . . . .
±
1 V
Digital Inputs to Digital Common . . . –0.5 V to V
LOGIC
+0.5 V
Analog Inputs to Analog Common . . . . . . . . . . . . V
EE
to V
CC
20 V
IN
to Analog Common . . . . . . . . . . . . . . . . . V
EE
to +24 V
REF OUT . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to V
CC
Junction T emperature . . . . . . . . . . . . . . . . . . . . . . . . . +175
°
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . .825 mW
Lead T emperature, Soldering (10 sec) . . . . . . . +300
°
C, 10 sec
Storage T emperature . . . . . . . . . . . . . . . . . . . –65
°
C to +150
°
C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. T his is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
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