參數(shù)資料
型號: ACT-9S512K8X-025L2I
廠商: Aeroflex Inc.
英文描述: ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
中文描述: 行為PS512K8高速4兆位單片SRAM的塑料
文件頁數(shù): 3/6頁
文件大?。?/td> 73K
代理商: ACT-9S512K8X-025L2I
Aeroflex Circuit Technology
SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700
3
AC Characteristics
(V
CC
= 5.0V, V
SS
= 0V, T
C
= -55°C to +125°C or -40°C to +85°C)
Read Cycle
Parameter
Sym
–010
Min Max
10
–012
Min Max
12
–015
Min Max
15
–017
Min Max
17
–020
Min Max
20
–025
Min Max
25
Units
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Enable to Output in Low Z (1)
Output Enable to Output in Low Z (1)
Chip Deselect to Output in High Z (1)
Output Disable to Output in High Z (1)
t
RC
t
AA
t
ACE
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
12
15
17
20
25
10
12
15
17
20
25
3
3
3
3
4
5
5
6
7
8
10
12
3
3
3
3
3
3
0
0
0
0
0
0
5
6
7
7
8
10
5
6
7
7
8
10
Note 1. Guaranteed by design, but not tested
Write Cycle
Parameter
Sym
–010
Min Max
10
–012
Min Max
12
–015
Min Max
15
–017
Min Max
17
–020
Min Max
20
–025
Min Max
25
Units
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write (1)
Write to Output in High Z (1)
Data Hold from Write Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
t
WHZ
t
DH
ns
7
8
10
12
13
15
ns
7
8
10
12
13
15
ns
5
6
8
8
9
10
ns
7
8
10
12
13
15
ns
0
0
0
0
0
0
ns
0
0
0
0
0
0
ns
3
3
3
3
4
5
ns
5
6
7
8
8
10
ns
0
0
0
0
0
0
ns
Note 1. Guaranteed by design, but not tested
Data Retention Electrical Characteristics (Special Order Only)
V
CC
= 5.0V, V
SS
= 0V, T
C
= -55°C to +125°C or -40°C to +85°C)
Parameter
Sym
Test Conditions
All Speeds
Min Typ Max
2
0.5
Units
V
CC
for Data Retention
Data Retention Current
V
DR
I
CCDR1
CE
V
CC
– 0.2V
V
CC
= 3V
5.5
2.0
V
mA
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