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參數(shù)資料
| 型號(hào)： | ACS406 |
| 英文描述： | ACS406 4 x E1/T1 Reference Design (190k) |
| 中文描述： | ACS406 4個(gè)E1/T1的參考設(shè)計(jì)（190K章） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | ACS406 |
ACS402-5SB4
2/8
Symbol
V
DRM /
V
RRM
I
T(RMS)
Parameter
Value
500
Unit
V
Repetitive peak off-state voltage
Tj = 125 °C
RMS on-state current full cycle sine
wave 50 to 60 Hz
per switch
total array
Tamb = 110 °C
Tamb = 90 °C
F =50 Hz
F =60 Hz
F =120 Hz
0.2
0.4
5
5.5
20
A
A
A
A
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
dI/dt
Critical rate of repetitive rise of on-state current
I
G
= 20mA (tr = 100ns)
Non repetitive line peak pulse voltage
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
A/
μ
s
V
PP
Tstg
Tj
Tl
note 1
2
kV
°C
°C
°C
- 40 to + 150
- 30 to + 125
260
Note 1
: according to test described by IEC61000-4-5 standard & Figure 3.
ABSOLUTE RATINGS
(limiting values)
Symbol
P
G (AV)
I
GM
V
GM
Parameter
Value
0.1
1
5
Unit
W
A
V
Average gate power dissipation
Peak gate current (tp = 20
μ
s)
Peak positive gate voltage (respect to the pin COM)
SWITCH GATE CHARACTERISTICS
(maximum values)
Symbol
Rth (j-a)
Parameter
Value
90
Unit
°
C/W
Junction to ambient
THERMAL RESISTANCE
Symbol
Test conditions
Values
Unit
I
GT
V
D
= 12V
R
L
= 140
Tj=25°C
MAX.
10
mA
V
GT
V
D
= 12V
R
L
= 140
Tj=25°C
MAX.
1
V
V
GD
V
OUT
= V
DRM
R
L
= 3.3k
Tj=125°C
MIN.
0.15
V
I
H
I
OUT
= 100mA gate open
Tj=25°C
TYP.
25
mA
MAX.
60
mA
I
L
I
G
= 20mA
Tj=25°C
TYP.
30
mA
MAX.
65
mA
V
TM
I
OUT
= 0.3A
tp = 500
μ
s
Tj=25°C
MAX.
1.1
V
I
DRM
I
RRM
V
OUT
= V
DRM
V
OUT
= V
RRM
Tj=25°C
MAX.
2
μ
A
Tj=125°C
MAX.
200
μ
A
dV/dt
V
OUT
= 400V gate open
Tj=110°C
MIN.
500
V/
μ
s
(dI/dt)c
(dV/dt)c = 10V/
μ
s
Tj=110°C
MIN.
0.1
A/ms
V
CL
I
CL
= 1mA
tp = 1ms
Tj=25°C
TYP.
600
V
ELECTRICAL CHARACTERISTICS PER SWITCH
For either positive or negative polarity of pin OUT1, OUT2, OUT3, OUT4 voltage respect to pin COM voltage.
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