
ACS102-5Tx
2/8
Symbol
V
DRM
/ V
RRM
I
T(RMS)
Parameter
Value
500
0.2
0.2
7.3
8
20
Unit
V
A
A
A
A
A/
μ
s
Repetitive peak off-state voltage
RMS on-state current full cycle sine
wave 50 to 60 Hz
Tj = 125 °C
Tamb = 100 °C
Tamb = 100 °C
F =50 Hz
F =60 Hz
F =120 Hz
TO-92
SO-8
I
TSM
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
dI/dt
Critical rate of repetitive rise of on-state current
I
G
= 10mA with tr = 100ns
Non repetitive line peak pulse voltage
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
V
PP
Tstg
Tj
Tl
note 1
2
kV
°C
°C
°C
- 40 to + 150
- 30 to + 125
260
Note 1
: according to test described by IEC61000-4-5 standard & Figure 3.
ABSOLUTE RATINGS
(limiting values)
Symbol
P
G (AV)
I
GM
V
GM
Parameter
Value
0.1
1
5
Unit
W
A
V
Average gate power dissipation
Peak gate current (tp = 20
μ
s)
Peak positive gate voltage (respect to the pin COM)
SWITCH GATE CHARACTERISTICS
(maximum values)
Symbol
Rth (j-a)
Parameter
Value
150
150
60
Unit
°C/W
°C/W
°C/W
Junction to ambient
TO-92
SO-8 *
TO-92
Rth (j-l)
Junction to leads for full AC line cycle conduction
* with 40mm2copper (ex: 35
μ
m) surface under “com” pins
THERMAL RESISTANCES
Symbol
Test Conditions
Values
Unit
I
GT
V
OUT
=12V
R
L
=140
R
L
=140
Tj=25°C
MAX
5
mA
V
GT
V
OUT
=12V
V
OUT
=V
DRM
R
L
=3.3k
I
OUT
= 100mA gate open
Tj=25°C
MAX
0.9
V
V
GD
Tj=125°C
MIN
0.15
V
I
H
Tj=25°C
TYP
20
mA
MAX
tbd
I
L
I
G
= 20mA
Tj=25°C
TYP
25
mA
MAX
tbd
V
TM
I
OUT
= 0.3A
tp=380
μ
s
Tj=25°C
MAX
1.2
V
I
DRM
I
RRM
V
OUT
= V
DRM
V
OUT
= V
RRM
Tj=25°C
MAX
2
μ
A
Tj=125°C
MAX
200
dV/dt
V
OUT
=400V gate open
(dV/dt)c = 5V/
μ
s
(dV/dt)c = 10V/
μ
s I
OUT
< 0
I
CL
= 1mA
tp=1ms
Tj=110°C
MIN
300
V/
μ
s
A/ms
(dI/dt)c
*(Note 3)
I
OUT
> 0
Tj=110°C
MIN
0.1
0.15
V
CL
Tj=25°C
TYP
600
V
tbd = to be defined
ELECTRICAL CHARACTERISTICS
For either positive or negative polarity of pin OUT voltage respect to pin COM voltage excepted note 3*.