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參數(shù)資料
| 型號： | ACR300SG33 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Fast Turn-on Asymmetric Thyristor |
| 中文描述： | 1040 A, 3300 V, ASSYMETRIC SCR |
| 封裝： | G, 4 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 115K |
| 代理商： | ACR300SG33 |
www.dynexsemi.com
ACR300SG33
3/6
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DWM
= 12V, R
L
= 6
, T
case
= 25
o
C
Typ.
Max.
Units
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DWM
= 12V, R
L
= 6
, T
case
= 25
o
C
I
GT
Gate trigger current
-
5
V
-
500
mA
V
FGM
Peak forward gate voltage
-
-
40
V
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
-
P
GM
Peak gate power
-
-
10
V
-
20
A
-
40
W
-
10
W
-
Forward
Average time 10ms max
P
G(AV)
Average gate power
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1000A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From V
to 125A
Gate source 30V, 10
Gate rise time = 100ns, T
j
= 125C
dV/dt
Linear rate of rise of off-state voltage
To V
D
= 2000V, Gate open circuit, T
j
= 125
o
C
Min.
Max.
Units
-
2.0
V
-
60
mA
3000
-
V/
μ
s
-
2000
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
Latching current
1.19
-
V
-
0.81
m
V
D
= 5V, T
j
= 25C
I
L
-
600
mA
I
H
Holding current
I
TM
= 500A, I
T
= 5A, T
j
= 25C
t
d
Delay time
V
= 3000V
Gate source = 30V, 10
Gate rise time = 100ns
-
300
mA
-
350
ns
See Fig.1. T
j
= 25 - 70C.
ns
50
-
Rise time
t
r
-
-
ns
T
j
= 25C
T
j
= 70C
CURRENT CARRYING CAPABILITY AFTER CHIP SHORT CIRCUIT
In the event of a chip short-circuit due to excess anode-cathode
voltage, the device will handle a high continuous RMS fault
current without significant damage. Rating details are as follows:
Continuous current capability: 300A RMS, ac or dc in either
direction.
Conditions:
1. Device single or double side cooled.
2. Case temperature to be held at 200C or less.
3. A suitable high temperature clamp to be used.
4. Chip fault site resistance assumed to be 3m
±
10%.
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