參數(shù)資料
型號： AC10FSMA
廠商： NEC Corp.
英文描述： 10 A RESIN INSULATION TYPE TRIAC
中文描述： 10阿樹脂絕緣型可控硅
文件頁數(shù)： 2/6頁
文件大?。?/td> 217K
代理商： AC10FSMA
Data Sheet D13661EJ4V0DS
2
AC10DSMA,AC10FSMA
MAXIMUM RATINGS
Parameter
Symbol
AC10DSMA
AC10FSMA
Unit
Remarks
Non-repetitive Peak Off-state Voltage
V
DSM
500
700
V
Repetitive Peak Off-state Voltage
V
DRM
400
600
V
Effective On-state Current
I
T(RMS)
10 (T
C
= 85°C)
A
Refer to
Figure 11
and
12
.
Surge On-state Current
I
TSM
80 (50 Hz 1 cycle)
A
Refer to
Figure 2
.
88 (60 Hz 1 cycle)
Fusing Current
∫
i
T2
dt
28 (1 ms
≤
t
≤
10 ms)
A
2
s
Critical Rate Rise of On-state Current
dI
T
/dt
50
A/
μ
s
Peak Gate Power Dissipation
P
GM
5.0 (f
≥
50 Hz, Duty
≤
10%)
W
Average Gate Power Dissipation
P
G(AV)
0.5
W
Peak Gate Current
I
GM
±3 (f
≥
50 Hz, Duty
≤
10%)
A
Junction Temperature
T
j
40
～
+125
°
C
Storage Temperature
T
stg
55
～
+150
°
C
ELECTRICAL CHARACTERISTICS (T
j
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP. MAX.
Unit
Remarks
Repetitive Peak Off-state Current
I
DRM
V
DM
= V
DRM
T
j
= 25°C
100
μ
A
T
j
= 125°C
2
mA
On-state Voltage
V
TM
I
TM
= 10 A
1.3
V
Refer to
Figure 1
.
Gate Trigger Current
Mode I
I
GT
V
DM
= 12 V,
T
2
+, G+
20
mA Refer to
Figure 4
.
II
R
L
= 30
T
2
, G+
III
T
2
, G
20
IV
T
2
+, G
20
Gate Trigger Voltage
Mode I
V
GT
V
DM
= 12 V,
T
2
+, G+
1.5
V
Refer to
Figure 4
.
II
R
L
= 30
T
2
, G+
III
T
2
, G
1.5
IV
T
2
+, G
1
V
DRM
1.5
Gate Non-trigger Voltage
V
GD
T
j
= 125°C, V
DM
=
2
0.3
V
Holding Current
I
H
V
DM
= 24 V, I
TM
= 10 A
30
mA
Critical Rate Rise of Off-state Voltage
dv/dt
T
j
= 125°C, V
DM
=
3
2
V
DRM
100
V
/μ
s
Commutating Critical Rate Rise of
Off-state Voltage
Thermal Resistance
Note
(dv/dt)c T
j
= 125°C,
(di
T
/dt)c =
5 A/ms, V
D
= 400
V
10
V
/μ
s
R
th(j-c)
Junction-to-case AC
3.5
°C/W Refer to
Figure 13
.
Note
The thermal resistance with a 50 Hz or 60 Hz sine wave current, as shown in the following expression:
R
th(j-c)
=
)
AV
(
T
C
(max)
P
j
T
T
T
j(max)
: Maximum junction temperature
T
C
: Case temperature
P
T(AV)
: Average on-dissipation
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