參數(shù)資料
型號: ABV0202HSC-T
廠商: ABRACON CORP
元件分類: XO, clock
英文描述: VCXO, CLOCK, CMOS OUTPUT
封裝: SOIC-8
文件頁數(shù): 3/4頁
文件大?。?/td> 51K
代理商: ABV0202HSC-T
ABV0202
Low Phase Noise VCXO (24MHz to 50MHz)
30332 Esperanza., Rancho Santa Margarita, Ca 92688 Ph: 949-546-8000 Fax: 949-546-8001 www.Abracon.com 03/11/05 Page 3
3. AC Electrical Specifications
PARAMETERS
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Input Crystal Frequency
12
25
MHz
Output Clock Rise/Fall Time
(Standard Drive)
0.3V ~ 3.0V with 15 pF load
2.4
Output Clock Rise/Fall Time
(High Drive)
0.3V ~ 3.0V with 15 pF load
1.2
ns
Output Clock Duty Cycle
Measured @ 50% VDD
45
50
55
%
4. Voltage Control Crystal Oscillator
PARAMETERS
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
VCXO Stabilization Time *
TVCXOSTB
From power valid
10
ms
VCXO Tuning Range
FXIN = 12 – 25MHz;
XTAL C0/C1 < 250
0V
≤ VCON ≤ 3.3V
500
ppm
CLK output pullability
VCON=1.65V,
±1.65V
±200
ppm
VCXO Tuning Characteristic
165
ppm/V
Pull range linearity
10
%
VCON pin input impedance
2000
k
VCON modulation BW
0V
≤ VCON ≤ 3.3V, -3dB
25
kHz
Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
5. Jitter and Phase Noise Specification
PARAMETERS
CONDITIONS
MIN.
TYP.
MAX.
UNITS
RMS Period Jitter
(1 sigma – 1000 samples)
at 44MHz, with capacitive decoup-
ling between VDD and GND.
3
ps
Phase Noise relative to carrier
44MHz @100Hz offset
-100
dBc/Hz
Phase Noise relative to carrier
44MHz @1kHz offset
-123
dBc/Hz
Phase Noise relative to carrier
44MHz @10kHz offset
-130
dBc/Hz
Phase Noise relative to carrier
44MHz @100kHz offset
-125
dBc/Hz
Phase Noise relative to carrier
44MHz @1MHz offset
-125
dBc/Hz
6. Crystal Specifications
PARAMETERS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Crystal Resonator Frequency
FXIN
12
25
MHz
Crystal Loading Capacitance Rating
CL (xtal)
9.5
pF
C0/C1
250
-
ESR
RS
30
Note: Crystal Loading rating: 9.5pF is the loading the crystal sees from the VCXO chip at VCON = 1.65V. It is assumed that the crystal will be at
nominal frequency at this load. If the crystal requires more load to be at nominal frequency, the additional load must be added externally.
This however may reduce the pull range.
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