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2
ABA-54563 Absolute Maximum Ratings
[1]
Symbol
Parameter
Units
Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25
°
C)
V
6
P
in
CW RF Input Power
dBm
20
P
diss
Total Power Dissipation
[3]
mW
560
θ
j-c
Thermal Resistance
[2]
°
C/W
110
T
j
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150
°
C
Liquid Crystal Measurement method.
3. Case temperature Tc at 25
°
C. Derate at
9.1mW/
°
C for Tc > 87.5
°
C.
Product Consistency Distribution Charts at 5.0V and 2 GHz.
[1]
Figure 1. S21 Distribution.
F
100
80
60
40
20
0
21.8
S21 (dB)
22.2
23
23.4
22.6
23.8
Figure 2. P1dB Distribution.
F
80
60
40
20
0
15.3
P1dB (dBm)
15.6
16.2
16.5
15.9
16.8
Figure 3. Noise Figure Distribution.
F
120
100
80
60
40
20
0
NF (dB)
3.6
4
4.4
4.8
5.2
Figure 4. OIP3 Distribution.
F
80
60
40
20
0
26.5
OIP3 (dBm)
27
28
28.5
27.5
29
Note:
1. Measured on the production test circuit base on 500 samples.
Figure 5. Test circuit at of the 2 GHz production test board used for NF,
Gain and OIP3 measurements. Circuit losses have been de-embedded
from actual measurements.
RF Output
RF Input
Vcc
RFC
33 nH
C
block
1 nF
C
block
1 nF
4
C
bypass
100 pF
C
bypass
1000 pF