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參數(shù)資料
| 型號(hào)： | ABA-31563-TR2G |
| 英文描述： | GT 3C 3#16S SKT PLUG |
| 中文描述： | 3.5 GHz的寬帶硅射頻放大器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 103K |
| 代理商： | ABA-31563-TR2G |
2
ABA-31563 Absolute Maximum Ratings
[1]
Symbol
Parameter
Units
Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25
°
C)
V
6
P
in
CW RF Input Power (Vcc = 3V)
dBm
15
P
diss
Total Power Dissipation
[3]
W
0.3
T
j
Junction Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150
°
C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25
°
C. Derate 2.3 mW/
°
C for Tc
> 120.8
°
C.
Electrical Specifications
T
c
= +25
°
C, Z
o
= 50
, P
in
= -30 dBm, V
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp
[1]
Power Gain (|S
21
|
2
)
dB
20.0
21.5
Gp
Power Gain Flatness, f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
dB
0.2
1.3
NF
[1]
Noise Figure
dB
3.8
4.8
P1dB
[1]
Output Power at 1dB Gain Compression
dBm
2.2
OIP3
[1]
Output Third Order Intercept Point
dBm
13.1
VSWR
in[1]
Input VSWR
<1.5
VSWR
out[1]
Output VSWR
<1.5
Icc
[1]
Device Current
mA
14
16
Td
[1]
Group Delay
ps
140
Notes:
1. Measurements taken on 50
test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Figure 1. ABA-31563 Production Test Circuit.
Thermal Resistance
[2]
(Vcc = 3V)
θ
j-c
= 125
°
C/W
RF Output
RF Input
Vcc
RFC
33 nH
C
block
1 nF
C
block
1 nF
1
C
bypass
100 pF
C
bypass
1000 pF
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