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參數(shù)資料
| 型號： | AB1L3N |
| 廠商： | NEC Corp. |
| 英文描述： | JT 55C 55#22D PIN RECP |
| 中文描述： | 片上NPN硅外延電阻晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 85K |
| 代理商： | AB1L3N |
Data Sheet D10836EJ2V0DS
2
AB1 SERIES
AB1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Collector saturation voltage
V
CE(sat)
**
I
C
= 5.0 A, I
C
= 5 mA
0.27
0.4
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
AB1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
150
400
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
700
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
600
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.5 A
0.2
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
AB1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
80
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
100
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.5 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
0.4
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
0.7
1.0
1.3
k
E-to-B resistance
R
2
0.7
1.0
1.3
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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