參數(shù)資料
型號： AB1F3P
廠商： NEC Corp.
英文描述： on-chip resistor NPN silicon epitaxial transistor
中文描述： 片上NPN硅外延電阻晶體管
文件頁數(shù)： 3/6頁
文件大小： 85K
代理商： AB1F3P
Data Sheet D10836EJ2V0DS
3
AB1 SERIES
AB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.3 A
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Input resistance
R
1
1.54
2.2
2.86
k
k
E-to-B resistance
R
2
7
10
13
**PW
≤
350
μ
s, duty cycle
≤
2 %
AB1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
600
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
700
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
600
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
0.14
0.3
V
Low level input voltage
V
IL
**
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
k
Input resistance
R
1
2.31
3.3
4.29
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
AB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 30 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 2.0 V, I
C
= 0.1 A
300
DC current gain
h
FE2
**
V
CE
= 2.0 V, I
C
= 0.5 A
300
DC current gain
h
FE3
**
V
CE
= 2.0 V, I
C
= 0.7 A
135
Low level output voltage
V
OL
**
V
IN
= 5.0 V, I
C
= 0.2 A
V
CE
= 5.0 V, I
C
= 100
μ
A
0.3
V
Low level input voltage
V
IL
**
0.3
V
Input resistance
R
1
3.29
4.7
6.11
k
E-to-B resistance
R
2
7
10
13
k
**PW
≤
350
μ
s, duty cycle
≤
2 %
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