參數(shù)資料
型號(hào)： AB1A4A
元件分類： 小信號(hào)晶體管
英文描述： 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： SC-43B, 3 PIN
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 230K
代理商： AB1A4A
Data Sheet D10836EJ2V0DS
3
AB1 SERIES
AB1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
300
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
DC current gain
hFE3 **
VCE = 2.0 V, IC = 0.7 A
135
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.3 A
0.3
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.3
V
Input resistance
R1
1.54
2.2
2.86
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AB1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
300
600
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
700
DC current gain
hFE3 **
VCE = 2.0 V, IC = 0.7 A
135
600
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.2 A
0.14
0.3
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.3
V
Input resistance
R1
2.31
3.3
4.29
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
AB1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 30 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 2.0 V, IC = 0.1 A
300
DC current gain
hFE2 **
VCE = 2.0 V, IC = 0.5 A
300
DC current gain
hFE3 **
VCE = 2.0 V, IC = 0.7 A
135
Low level output voltage
VOL **
VIN = 5.0 V, IC = 0.2 A
0.3
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.3
V
Input resistance
R1
3.29
4.7
6.11
k
E-to-B resistance
R2
710
13
k
** PW
≤ 350
s, duty cycle ≤ 2 %
相關(guān)PDF資料
PDF描述
AB1J3P 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
AB1A4M 700 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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參數(shù)描述
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