參數(shù)資料
型號(hào): AAT9060
廠商: Advanced Analogic Technologies, Inc.
英文描述: 30V N-Channel Power MOSFET
中文描述: 30V的N溝道功率MOSFET
文件頁數(shù): 2/6頁
文件大?。?/td> 141K
代理商: AAT9060
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Notes:
1. Based on thermal dissipation from junction to case. R
θ
JC
+ R
θ
CA
= R
θ
JA
where the case thermal reference is defined as the solder
mounting surface of the drain tab. R
θ
JC
is guaranteed by design, however R
θ
CA
is determined by the PCB design. Package current is
limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 μs.
4. Guaranteed by design. Not subject to production testing.
Symbol
Description
Conditions
Min
Typ
Max
Units
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250μA
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=19A
V
GS
=10V, V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
GS
=0V, V
DS
=30V
V
GS
=0V, V
DS
=30V, T
J
=70°C
4
V
DS
=5V, I
D
=9A
30
V
R
DS(ON)
Drain-Source ON-Resistance
3
13
21
16
27
m
I
D(ON)
V
GS(th)
I
GSS
On-State Drain Current
3
Gate Threshold Voltage
Gate-Body Leakage Current
60
1.0
A
V
nA
±100
1
25
I
DSS
Drain Source Leakage Current
μA
g
fs
Forward Transconductance
3
Dynamic Characteristics
4
Q
G
Total Gate Charge
Q
GT
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
3
I
S
Continuous Diode Current
1
20
S
V
DS
=15V, R
D
=1.3
, V
GS
=5V
V
DS
=15V, R
D
=1.3
, V
GS
=10V
V
DS
=15V, R
D
=1.3
, V
GS
=10V
V
DS
=15V, R
D
=1.3
, V
GS
=10V
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
V
DD
=15V, R
D
=1.3
, V
GS
=10V, R
G
=6
13
25
4
3.5
12
38
21
32
16
32
nC
ns
V
GS
=0, I
S
=20A
2
20
V
A
AAT9060
30V N-Channel Power MOSFET
2
9060.2003.05.0.9
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