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參數(shù)資料
| 型號： | AAT8660F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | ONE-CELL LI-ION BATTERY PROTECTION IC |
| 中文描述： | 單節(jié)鋰離子電池保護IC |
| 文件頁數(shù)： | 4/24頁 |
| 文件大?。?/td> | 586K |
| 代理商： | AAT8660F |
Advanced Analog Technology, Inc.
AAT8660A DETECTION VOLTAGE AND DELAY TIME
(
PARAMETER
SYMBOL
–
–
Advanced Analog Technology, Inc
.
–
–
Page 4 of 24 V 1.0
AAT8660 Series
)
TYP
MAX UNIT
C
25
o
TEST CONDITION
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
3.6V
V
DD
=
to 4.5V
V
6
V
DD
=
to 2.4V
Detect Rising Edge of “VN” Pin
Voltage (
out
D
Response with t
OC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage (
out
D
with t
OC2
Delay Time)
V
0
V
DD
=
, Detect Rising Edge
of “VN” Pin Voltage (
Response with
t
Time)
MIN
Over Charge Threshold Voltage
V
4.275
4.325
4.375
V
Over Charge Release Voltage
2
C
V
V
C1
-0.35
V
C1
-0.25
V
C1
-0.15
V
Over Discharge Threshold
Voltage
1
D
V
2.420
2.500
2.580
V
Over Discharge Release Voltage
2
D
V
V
D1
+0.3
V
D1
+0.4
V
D1
+0.5
V
Over Charge Delay Time
Over Discharge Delay Time
1
C
t
0.700
87.5
1.000
125.0
1.300
162.5
s
1
D
t
ms
Over Current Level 1 Detection
Voltage
1
OC
V
130
150
170
mV
Over Current Level 2 Detection
Voltage
2
OC
V
Response
400
500
600
mV
Short Circuit Detection Voltage
short
V
out
D
short
Delay
7
V
DD
3
V
DD
9
V
DD
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
V
DD
=
Room Temp.
Low or High Temp.
V
0
V
DD
=
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
2
OC
t
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
V
DD
=
10
50
s
μ
Charger Detection Voltage
CHR
V
Detect Rising Edge of “
Pin Voltage (when V
D1
V
D2
)
V
5
V
DD
=
;
V
0
VN
=
V
5
V
DD
=
;
V
5
C
out
=
;
V
5
V
DD
=
;
V
0
VN
=
V
8
V
DD
=
;
V
5
D
out
=
;
out
D
V
DD
”
0
3
6
V
out
C
High Level Resistance
COH
R
V
0
C
out
=
;
1
2
10
k
out
C
Low Level Resistance
COL
R
V
0
0
VN
=
D
out
=
150
602
2,380
k
out
D
High Level Resistance
DOH
R
V
;
2.5
5.0
10.0
k
out
D
Low Level Resistance
DOL
R
V
8
VN
=
2.5
5.0
10.0
k
Internal Resistance between VN
and
DD
V
Internal Resistance between VN
and GND
VND
R
V
8
V
DD
=
;
V
0
VN
=
100
300
900
k
VNG
R
V
5
V
DD
=
;
V
5
VN
=
10
20
40
k
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