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參數資料
| 型號： | AAT8641J |
| 廠商： | Advanced Analog Technology,lnc. |
| 英文描述： | ONE-CELL LI-ION BATTERY PROTECTION IC |
| 中文描述： | 單節(jié)鋰離子電池保護IC |
| 文件頁數： | 10/25頁 |
| 文件大?。?/td> | 626K |
| 代理商： | AAT8641J |
Advanced Analog Technology, Inc.
AAT8641G DETECTION VOLTAGE AND DELAY TIME (25
PARAMETER
SYMBOL
–
臺灣類比科技股份有限公司
–
–
Advanced Analog Technology, Inc
.
–
Page 10 of 25
V2.0
AAT8641 Series
℃
)
MIN
TYP
TEST CONDITION
Detect Rising Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Falling Edge of Supply
Voltage
Detect Rising Edge of Supply
Voltage
V
6
V
DD
=
to 4.5V
V
6
V
DD
=
to 2.2V
Detect Rising Edge of “VN” Pin
Voltage (
out
D
Response with
t
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage (
out
D
with
2
OC
t
V
0
V
DD
=
, Detect Rising Edge
of “VN” Pin Voltage (
Response with
short
t
MAX
UNIT
Over Charge Threshold Voltage
1
C
V
4.325
4.350
4.375
V
Over Charge Release Voltage
2
C
V
V
C1
-0.25 V
C1
-0.20 V
C1
-0.15
V
Over Discharge Threshold
Voltage
1
D
V
2.220
2.300
2.380
V
Over Discharge Release Voltage
2
D
V
V
D1
+0.6
V
D1
+0.7 V
D1
+0.8
V
Over Charge Delay Time
1
C
t
0.088
0.125
0.163
s
Over Discharge Delay Time
1
D
t
22.4
32.0
41.6
ms
Over Current Level 1 Detection
Voltage
1
OC
V
1
OC
180
200
220
mV
Over Current Level 2 Detection
Voltage
2
OC
V
Response
Delay Time)
400
510
600
mV
Short Circuit Detection Voltage
short
V
out
D
Delay Time)
7
V
DD
3
V
DD
9
V
DD
V
Over Current Level 1 Detection
Delay Time
1
OC
t
V
0
V
DD
=
Room Temp.
Low or High Temp.
V
0
V
DD
=
2.8
4.0
5.2
ms
Over Current Level 2 Detection
Delay Time
2
OC
t
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
V
0
V
DD
=
10
50
s
μ
Charger Detection Voltage
CHR
V
Detect Rising Edge of “
Pin Voltage (when V
D1
＜
V
DD
＜
V
D2
)
V
=3.5V;
out
C
V
=4.5V;
out
C
V
=3.5V;
out
D
V
=1.8V;
D
=0.5V;VN=1.8V
out
D
”
0
3
6
V
out
C
High Level Resistance
COH
R
DD
=3.0V;VN=0V
1
2
10
Ω
Ω
Ω
k
out
C
Low Level Resistance
COL
R
DD
=0.5V;VN=0V
150
602
2,380
k
out
D
High Level Resistance
DOH
R
DD
=3.0V;VN=0V
2.5
5.0
10.0
k
out
D
Low Level Resistance
DOL
R
DD
out
2.5
5.0
10.0
Ω
k
Internal Resistance between VN
and
DD
V
Internal Resistance between VN
and GND
VND
R
DD
V
=1.8V; VN=0V
100
300
900
Ω
k
VNG
R
DD
V
=3.5V; VN=3.5V
50
150
300
Ω
k
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