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參數(shù)資料
| 型號： | AAT8640-S5 |
| 廠商： | Advanced Analog Technology,lnc. |
| 英文描述： | ONE-CELL LI-ION BATTERY PROTECTION IC |
| 中文描述： | 單節(jié)鋰離子電池保護IC |
| 文件頁數(shù)： | 14/25頁 |
| 文件大小： | 611K |
| 代理商： | AAT8640-S5 |
Advanced Analog Technology, Inc.
AAT8640K DETECTION VOLTAGE AND DELAY TIME (25
PARAMETER
SYMBOL
–
臺灣類比科技股份有限公司
–
–
Advanced Analog Technology, Inc
.
–
Page 14 of 25
V2.0
AAT8640 Series
℃
)
MIN
TYP
TEST CONDITION
Detect rising edge of supply
voltage
Detect falling edge of supply
voltage
Detect falling edge of supply
voltage
Detect rising edge of supply
voltage
3.6V
V
DD
=
to 4.5V
2.8V
V
DD
=
to 2.2V
Detect Rising Edge of “VN” Pin
Voltage (
out
D
Response with t
OC1
Delay Time)
Detect Rising Edge of “VN”
Pin Voltage (
out
D
with t
OC2
Delay Time)
V
0
V
DD
=
, Detect Rising Edge
of “VN” Pin Voltage (
Response with
t
Time)
V
0
V
DD
=
MAX UNIT
Over Charge Threshold Voltage
V
C1
4.20
4.25
4.30
V
Over Charge Release Voltage
V
C2
V
C1
-0.3
V
C1
-0.2
V
C1
-0.1
V
Over Discharge Threshold
Voltage
V
D1
2.201
2.281
2.361
V
Over Discharge Release Voltage
V
D2
V
D1
+0.5
V
D1
+0.6
V
D1
+0.7
V
Over Charge Delay Time
Over Discharge Delay Time
t
C1
0.700
87.5
80
1.000
125
100
1.300
162.5
120
s
1
D
t
ms
mV
Over Current Level 1 Detection
Voltage
1
OC
V
Over Current Level 2 Detection
Voltage
2
OC
V
Response
400
480
600
mV
Short Circuit Detection Voltage
short
V
out
D
short
Delay
7
V
DD
3
V
DD
9
V
DD
V
Over Current Level 1 Detection
Delay Time
1
OC
t
5.6
8.0
10.4
ms
Over Current Level 2 Detection
Delay Time
2
OC
t
Room Temp.
Low or High Temp.
V
0
V
DD
=
V
0
V
DD
=
1.4
1.1
2.0
2.0
2.6
3.4
ms
ms
Short Circuit Detection Delay
Time
short
t
10
50
μ
s
Charger Detection Voltage
CHR
V
Detect rising edge of “
voltage(when V
D1
＜
V
DD
＜
V
D2
)
V
5
V
DD
=
;
C
=3.0V;VN=0V
V
DD
=
;
C
=0.5V;VN=0V
V
DD
=
;
D
=3.0V;VN=0V
V
DD
=
;
D
=0.5V;VN=1.8V
out
D
” pin
-2.0
-1.3
-0.6
V
out
C
High Level Resistance
COH
R
out
1
2
10
k
out
C
Low Level Resistance
COL
R
V
5
out
150
602
2,380
Ω
k
out
D
High Level Resistance
DOH
R
V
5
out
2.5
5.0
10.0
Ω
k
out
D
Low Level Resistance
DOL
R
V
8
out
2.5
5.0
10.0
Ω
k
Internal Resistance Between VN
and
DD
V
Internal Resistance Between VN
and GND
VND
R
V
8
V
DD
=
; VN=0V
100
300
900
Ω
k
VNG
R
V
5
V
DD
=
; VN=3.5V
50
150
300
Ω
k
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