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參數(shù)資料
| 型號： | AA1A3Q-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | AA1A3Q-A |
1998
Document No. D16159EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AA1A3Q
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 1.0 k
, R2 = 10 k)
Complementary transistor with AN1A3Q
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE = 5.0 V, IC = 5.0 mA
35
60
100
DC current gain
hFE2 **
VCE = 5.0 V, IC = 50 mA
80
230
Collector saturation voltage
VCE(sat) **
IC = 5.0 mA, IB = 0.25 mA
0.05
0.2
V
Low level input voltage
VIL **
VCE = 5.0 V, IC = 100
A
0.7
0.9
V
High level input voltage
VIH **
VCE = 0.2 V, IC = 5.0 mA
2.0
1.0
V
Input resistance
R1
0.7
1.0
1.3
k
E-to-B resistance
R2
710
13
k
Turn-on time
ton
0.2
s
Storage time
tstg
5.0
s
Turn-off time
toff
VCC = 5 V, RL = 1 k
VI = 5 V, PW = 2
s
duty cycle
≤2 %
6.0
s
** PW
≤ 350
s, duty cycle ≤ 2 %
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相關(guān)代理商/技術(shù)參數(shù) |
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| AA1A4M | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR |
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