參數(shù)資料
型號(hào)： AA028P1-00
廠商： SKYWORKS SOLUTIONS INC
元件分類(lèi)： 放大器
英文描述： 27000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： DIE
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 541K
代理商： AA028P1-00
Skyworks Solutions, Inc. [781] 376-3000
Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 011/02A
27–29 GHz GaAs MMIC
Power Amplifier
Features
■ Single Bias Supply Operation (6 V)
■ 22 dBm Typical P1 dB Output Power
at 28 GHz
■ 13.5 dB Typical Small Signal Gain
■ 0.25 m Ti/Pd/Au Gates
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA028P1-00
Description
Skyworks’ two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P1 dB of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Skyworks’ proven 0.25
m
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current (at Saturation)
IDS
300
400
mA
Small Signal Gain
F = 27–29 GHz
G
11
13.5
dB
Input Return Loss
F = 27–29 GHz
RLI
-13
-10
dB
Output Return Loss
F = 27–29 GHz
RLO
-16
-10
dB
Output Power at 1 dB Gain Compression
F = 28 GHz
P1 dB
21
22
dBm
Saturated Output Power
F = 28 GHz
PSAT
22
23
dBm
Two-Tone Output Third-Order Intercept1
F = 28 GHz
OIP3
31
dBm
Gain at Saturation
F = 28 GHz
GSAT
11
dB
Thermal Resistance2
ΘJC
51
°C/W
Electrical Specifications at 25°C (VDS = 6 V)
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
1.700
1.613
1.371
0.086
0.000
0.790
2.749
3.400
0.329
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
22 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
相關(guān)PDF資料
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