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參數(shù)資料
| 型號(hào)： | AA026P2-00 |
| 廠商： | SKYWORKS SOLUTIONS INC |
| 元件分類： | 放大器 |
| 英文描述： | 23500 MHz - 26500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 562K |
| 代理商： | AA026P2-00 |
Skyworks Solutions, Inc. [781] 376-3000
Fax [781] 376-3100 Email sales@skyworksinc.com www.skyworksinc.com
1
Specifications subject to change without notice. 11/02A
23.5–26.5 GHz GaAs MMIC
Power Amplifier
Features
■ Single Bias Supply Operation (6 V)
■ 17 dB Typical Small Signal Gain
■ 24 dBm Typical P1 dB Output Power
at 26.5 GHz
■ 100% On-Wafer RF and DC Testing
■ 100% Visual Inspection to MIL-STD
MT 2010
Chip Outline
AA026P2-00
Description
Skyworks’ three-stage balanced K band GaAs MMIC
power amplifier has a typical P1 dB of 24 dBm and a typical
PSAT of 26 dBm at 26.5 GHz. The chip uses Skyworks’
proven 0.25
m MESFET technology, and is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the commercial and military
areas where high power and gain are required.
Parameter
Condition
Symbol
Min.
Typ.3
Max.
Unit
Drain Current (at Saturation)
IDS
520
700
mA
Small Signal Gain
F = 23.5–26.5 GHz
G
15
17
dB
Input Return Loss
F = 23.5–26.5 GHz
RLI
-17
-10
dB
Output Return Loss
F = 23.5–26.5 GHz
RLO
-20
-10
dB
Output Power at 1 dB Gain Compression
F = 26.5 GHz
P1 dB
23
24
dBm
Saturated Output Power
F = 26.5 GHz
PSAT
24
26
dBm
Two-Tone Output Third-Order Intercept1
F = 26.5 GHz
OIP3
33.5
dBm
Gain at Saturation
F = 26.5 GHz
GSAT
14
dB
Thermal Resistance2
ΘJC
17
°C/W
Electrical Specifications at 25°C (VDS = 6 V)
0.000
0.605
1.271
2.510
0.130
3.230
1.014
2.068
3.080
2.960
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (TC)
-55°C to +90°C
Storage Temperature (TST)
-65°C to +150°C
Bias Voltage (VD)7 VDC
Power In (PIN)
22 dBm
Junction Temperature (TJ)
175°C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
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