參數(shù)資料
型號: A77-1
元件分類: 放大器
英文描述: 5 MHz - 600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: HERMETICALLY SEALED, TO-8, 4 PIN
文件頁數(shù): 1/2頁
文件大小: 335K
代理商: A77-1
Cascadable Amplifier
5 to 600 MHz
A77-1 / SMA77-1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V3
1
Features
High Level Output: +16.5 dBm (TYP.)
High Third Order I.P.: +30 dBm (TYP.)
Extended Bandwidth: 5-600 MHz
Wide Power Supply Range: +8 to +15 Volts
Description
The A77-1 RF amplifier is a discrete hybrid design, which
incorporates the use of thin film manufacturing processes
for accurate performance and high reliability.
The single stage silicon bipolar transistor feedback
amplifier design displays impressive performance over a
broadband frequency range.
An active DC biasing
network is used for temperature-stable performance, in
addition to an RF Choke, used for power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is
available.
Ordering Information
Part Number
Package
A77-1
TO-8
SMA77-1
Surface Mount
CA77-1
SMA Connectorized
Over temperature performance limits for part number CA77-1, guaranteed from 0
oC to +50oC only.
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62C to +125C
Case Temperature
125C
DC Voltage
+17 V
Continuous Input Power
+13 dBm
Short Term Input power
(1 minute max.)
100 mW
Peak Power (3 sec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
125C
Thermal Data: VCC = 15 VDC
Parameter
Rating
Thermal Resistance θjc
130C/W
Transistor Power Dissipation Pd
0.464 W
Junction Temperature Rise
Above Case Tjc
60C
Product Image
Electrical Specifications: Z0 = 50
, VCC = 15 VDC
Parameter
Typical
Guaranteed
25C
0 to 50C
-54 to +85C
Frequency
MHz
2-700
5-600
Small Signal Gain (min)
dB
16.0
15.0
14.5
Gain Flatness (max)
dB
±0.3
±0.7
±1.0
Reverse Isolation
dB
17
Noise Figure (max)
dB
5.0
6.5
7.0
Power Output
@ 1 dB comp. (min)
dBm
16.5
15.0
14.5
IP3
dBm
+30
IP2
dBm
+43
Second Order Harmonic IP
dBm
+49
VSWR Input / Output (max)
1.5:1 / 1.5:1
1.8:1 / 1.8:1
2.0:1 / 2.0:1
DC Current (max)
mA
50
53
56
Units
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