參數(shù)資料
型號(hào)： A45L9332AE-8
廠商： AMIC Technology Corporation
英文描述： 256K X 32 Bit X 2 Banks Synchronous Graphic RAM
中文描述： 256 × 32位× 2銀行同步圖形內(nèi)存
文件頁(yè)數(shù)： 26/55頁(yè)
文件大?。?/td> 1255K
代理商： A45L9332AE-8
A45L9332A Series
PRELIMINARY
(October, 2001, Version 0.1)
25
AMIC Technology, Inc.
12. About Burst Type Control
Sequential counting
At MRS A3=”0”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=1,2,4,8 and full page wrap around.
At MRS A3=” 1”. See the BURST SEQUENCE TABE.(BL=4,8)
BL=4,8 At BL=1,2 Interleave Counting = Sequential Counting
At MRS A3 = “1”. (See to Interleave Counting Mode)
Starting Address LSB 3 bits A0-2 should be “000” or “111”.@BL=8.
--if LSB = “000” : Increment Counting.
--if LSB= “111” : Decrement Counting.
For Example, (Assume Addresses except LSB 3 bits are all 0, BL=8)
--@ write, LSB=”000”, Accessed Column in order 0-1-2-3-4-5-6-7
--@ read, LSB=”111”, Accessed Column in order 7-6-5-4-3-2-1-0
At BL=4, same applications are possible. As above example, at Interleave
Counting mode, by confining starting address to some values, Pseudo-
Decrement Counting Mode can be realized. See the BURST SEQUENCE TABLE
carefully.
At MRS A3 = “0”. (See to Sequential Counting Mode)
A0-2 = “111”. (See to Full Page Mode)
Using Full Page Mode and Burst Stop Command, Binary Counting Mode can be
realized.
--@ Sequential Counting Accessed Column in order 3-4-5-6-7-1-2-3 (BL=8)
--@ Pseudo-Binary Counting,
Accessed Column in order 3-4-5-6-7-8-9-10 (Burst Stop command)
Note. The next column address of 256 is 0
Every cycle Read/Write Command with random column address can realize
Random Column Access.
That is similar to Extended Data Out (EDO) Operation of convention DRAM.
Basic
MODE
Interleave counting
Pseudo-
Decrement Sequential
Counting
Pseudo-
MODE
Pseudo-Binary Counting
Random
MODE
Random column Access
t
CCD
= 1 CLK
13. About Burst Length Control
1
At MRS A2,1,0 = “000”.
At auto precharge, tRAS should not be violated.
At MRS A2,1,0 = “001”.
At auto precharge, tRAS should not be violated.
At MRS A2,1,0 = “010”
At MRS A2,1,0 = “011”.
At MRS A2,1,0 = “111”.
Wrap around mode (Infinite burst length) should be stopped by burst stop,
RAS
interrupt or
CAS
interrupt.
At MRS A9=”1”.
Read burst = 1,2,4,8, full page/write Burst =1
At auto precharge of write, tRAS should not be violated.
8 Column Block Write. LSB A0-2 are ignored. Burst length=1.
t
BWC
should not be violated.
At auto precharge, tRAS should not be violated.
t
BDL
=1, Valid DQ after burst stop is 1,2 for CL=2,3 respectively
Using burst stop command, it is possible only at full page burst length.
Before the end of burst, Row precharge command of the same bank
Stops read/write burst with Row precharge.
t
RDL
=2 with DQM, valid DQ after burst stop is 1,2 for CL=2,3 respectively
During read/write burst with auto precharge,
RAS
interrupt cannot be issued.
Before the end of burst, new read/write stops read/write burst and starts new
read/write burst or block write.
During read/write burst with auto precharge,
CAS
interrupt can not be issued.
2
4
8
Basic
MODE
Full Page
BRSW
Special
MODE
Block Write
Random
MODE
Interrupt
MODE
Burst Stop
RAS
Interrupt
(Interrupted by Precharge)
CAS
Interrupt
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