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參數(shù)資料
| 型號(hào)： | A43P26161V-75F |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| 中文描述： | 100萬× 16位× 4個(gè)銀行的低功耗同步DRAM |
| 文件頁數(shù)： | 12/44頁 |
| 文件大?。?/td> | 1122K |
| 代理商： | A43P26161V-75F |
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Device Operations
A43P26161
PRELIMINARY
(July, 2005, Version 1.1)
11
AMIC Technology, Corp.
Clock (CLK)
The clock input is used as the reference for all SDRAM
operations. All operations are synchronized to the positive
going edge of the clock. The clock transitions must be
monotonic between VIL and VIH. During operation with CKE
high all inputs are assumed to be in valid state (low or high)
for the duration of set up and hold time around positive edge
of the clock for proper functionality and ICC specifications.
Clock Enable (CKE)
The clock enable (CKE) gates the clock onto SDRAM. If
CKE goes low synchronously with clock (set-up and hold
time same as other inputs), the internal clock is suspended
from the next clock cycle and the state of output and burst
address is frozen as long as the CKE remains low. All other
inputs are ignored from the next clock cycle after CKE goes
low. When all banks are in the idle state and CKE goes low
synchronously with clock, the SDRAM enters the power
down mode from the next clock cycle. The SDRAM remains
in the power down mode ignoring the other inputs as long as
CKE remains low. The power down exit is synchronous as
the internal clock is suspended. When CKE goes high at
least “t
SS
+ 1
CLOCK
” before the high going edge of the
clock, then the SDRAM becomes active from the same clock
edge accepting all the input commands.
Bank Select (BS0, BS1)
This SDRAM is organized as 4 independent banks of
1,048,576 words X 16 bits memory arrays. The BS0, BS1
inputs is latched at the time of assertion of
RASand
CAS
to select the bank to be used for the operation. The bank
select BS0, BS1 is latched at bank activate, read, write
mode register set and precharge operations.
Address Input (A0 ~ A11)
The 20 address bits required to decode the 1,048,576 word
locations are multiplexed into 12 address input pins
(A0~A11). The 12 bit row address is latched along with
RAS, BS0 and BS1 during bank activate command. The 8
bit column address is latched along with
CAS
,
WE
, BS0
and BS1during read or write command.
NOP and Device Deselect
When RAS ,
CAS
performs no operation (NOP). NOP does not initiate any new
operation, but is needed to complete operations which
require more than single clock like bank activate, burst read,
auto refresh, etc. The device deselect is also a NOP and is
entered by asserting
CS
high.
CS
command decoder so that RAS ,
CAS
and
WE
, and all
the address inputs are ignored.
and
WE
are high, the SDRAM
high disables the
Power-Up
The following sequence is recommended for POWER UP
1. Power must be applied to either CKE and DQM inputs to
pull them high and other pins are NOP condition at the
inputs before or along with VDD (and VDDQ) supply.
The clock signal must also be asserted at the same time.
2. After VDD reaches the desired voltage, a minimum pause
of 200 microseconds is required with inputs in NOP
condition.
3. All banks must be precharged now.
4. Perform a minimum of 2 Auto refresh cycles to stabilize
the internal circuitry.
5. Perform a MODE REGISTER SET cycle to program the
CAS latency, burst length and burst type as the default
value of mode register is undefined.
At the end of one clock cycle from the mode register set
cycle, the device is ready for operation.
When the above sequence is used for Power-up, all the
out-puts will be in high impedance state. The high
impedance of outputs is not guaranteed in any other
power-up sequence.
cf.) Sequence of 4 & 5 may be changed.
Mode Register Set (MRS)
The mode register stores the data for controlling the various
operation modes of SDRAM. It programs the CAS latency,
addressing mode, burst length, test mode and various
vendor specific options to make SDRAM useful for variety of
different applications. The default value of the mode register
is not defined, therefore the mode register must be written
after power up to operate the SDRAM. The mode register is
written by asserting low on
CS
,RAS ,
CAS
,
WE
(The
SDRAM should be in active mode with CKE already high
prior to writing the mode register). The state of address pins
A0~A11,
BS0
and
BS1
CS
,RAS,
CAS
,
WE
going low is the data written in the
mode register. One clock cycle is required to complete the
write in the mode register. The mode register contents can
be changed using the same command and clock cycle
requirements during operation as long as all banks are in the
idle state. The mode register is divided into various fields
depending on functionality. The burst length field uses
A0~A2, burst type uses A3, addressing mode uses A4~A6,
A7~A8, A9, BS0 and BS1 are used for vendor specific
options or test mode. And the write burst length is
programmed using A9. A7~A8, A10~A11, BS0 and BS1
must be set to low for normal SDRAM operation.
Refer to table for specific codes for various burst length,
addressing modes and CAS latencies. BS0 and BS1 have to
be set to “0” to enter the Mode Register.
in
the
same
cycle
as
Extended Mode Register (EMRS)
The Extended Mode Register controls functions beyond
those controlled by the Mode Register. These additional
functions are unique to AMIC’s Low Power SDRAM and
includes a Refresh Period field (TCSR) for temperature
compensated self-refresh and a Partial-Array Self Refresh
field (PASR). The PASR field is used to specify whether only
bank A and bank B,or bank A,or 1/2 of bank A,or 1/4 of bank
A be refreshed. Disable banks will not be refreshed in Self-
Refresh mode and written data will be lost. When only bank
A is selected it is possible to partial select only half or one
quarter of bank A. The TCR field has four entries to set
Refresh Period during self-refresh depending on the case
temperature of the Low Power devices.
The Extended Mode Register is programmed via the Mode
Register Set command (with BS0=0 and BS1=1) and retains
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A43P26161V-75U | 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-75UF | 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-95 | CONNECTOR ACCESSORY |
| A43P26161V-95UF | 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A44 | TRANSISTOR（ NPN ） |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A43P26161V-75U | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-75UF | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-95 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-95F | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
| A43P26161V-95U | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Low Power Synchronous DRAM |
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