參數(shù)資料
型號(hào): A43L0632
廠商: AMIC Technology Corporation
英文描述: 512K X 32 Bit X 2 Banks Synchronous DRAM
中文描述: 為512k × 32位× 2銀行同步DRAM
文件頁數(shù): 2/44頁
文件大小: 1305K
代理商: A43L0632
Preliminary
A43L0632
512K X 32 Bit X 2 Banks Synchronous DRAM
PRELIMINARY
(August, 2005, Version 0.0)
1
AMIC Technology, Corp.
Features
Power supply
- VDD: 3.3V VDDQ : 3.3V
LVTTL compatible with multiplexed address
Two banks / Pulse
RAS
MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,4,8 & full page)
-
Burst Type (Sequential & Interleave)
Clock Frequency (max) : 167MHz @ CL=3 (-6)
143MHz @ CL=3 (-7)
All inputs are sampled at the positive going edge of the
system clock
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Industrial operating temperature range: -40oC to +85oC
for -U series.
Available in 90 Balls CSP (8mm X 13mm)
Package is available to lead free (-F series)
General Description
The A43L0632 is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 X 524,288 words by 32
bits, fabricated with AMIC’s high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock. I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
Pin Configuration
90 Balls CSP (8 mm x 13 mm)
Top View
90 Ball (8X13) CSP
2
3
DQ
24
VSS
VDDQ
VSSQ
DQ
27
DQ
25
DQ
29
DQ
30
DQ
31
DQM
3
A5
A8
CKE
1
7
8
9
A
B
C
D
E
F
G
H
J
DQ
26
DQ
28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
VDD
VDDQ
DQ
22
DQ
17
NC
A2
A10
NC
BA
DQ
23
VSSQ
DQ
20
DQ
18
DQ
16
DQM
2
A0
NC
CS
DQ
21
DQ
19
VDDQ
VDDQ
VSSQ
VDD
A1
NC
RAS
DQM
0
NC
A3
A6
NC
A9
K
DQM
1
NC
NC
CAS
VDD
DQ
6
DQ
1
VDDQ
VDD
WE
DQ
7
DQ
5
DQ
3
VSSQ
DQ
0
L
M
N
P
R
VDDQ
VSSQ
VSSQ
DQ
11
DQ
13
DQ
8
DQ
10
DQ
12
VDDQ
DQ
15
VSS
DQ
9
DQ
14
VSSQ
VSS
VSSQ
VDDQ
VDDQ
DQ
4
DQ
2
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