參數(shù)資料
型號: A43E06161V-95UF
廠商: AMIC Technology Corporation
英文描述: 512K X 16 Bit X 2 Banks Synchronous DRAM
中文描述: 為512k × 16位× 2銀行同步DRAM
文件頁數(shù): 28/46頁
文件大小: 1289K
代理商: A43E06161V-95UF
A43E06161
PRELIMINARY (July, 2005, Version 0.1)
27
AMIC Technology, Corp.
Page Write Cycle at Different Bank @Burst Length=4
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active with
(A-Bank)
Write
(A-Bank)
: Don't care
RAa
CAa
A10/AP
CBb
Write
(B-Bank)
Row Active
(B-Bank)
RBb
CAc
RAa
RBb
WE
DBb1
DBb0
DAa0 DAa1
DAa2
DAa3
DBb2
DBb3
DAc0
DAc1
Write
(A-Bank)
Precharge
(Both Banks)
DQM
DQ
t
CDL
DBd0
DBd1
*Note 2
CBd
t
RDL
*Note 1
Write
(B-Bank)
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
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