參數(shù)資料
型號(hào)： A43E06161V-95
廠商： AMIC Technology Corporation
英文描述： Switch Guard; For Use With:2 Position Toggle Switches; Features:Flush Mount; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Accessory Type:Switch Guard RoHS Compliant: No
中文描述： 為512k × 16位× 2銀行同步DRAM
文件頁(yè)數(shù)： 9/46頁(yè)
文件大小： 1289K
代理商： A43E06161V-95
A43E06161
PRELIMINARY
(July, 2005, Version 0.1)
8
AMIC Technology, Corp.
Simplified Truth Table
Command
CKEn-1 CKEn
CS
RAS
CAS
WE
DQM
BA A10/
AP
A9~A0
Notes
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1,2
Auto Refresh
H
L
3
Entry
H
L
L
L
H
X
X
3
L
H
H
H
3
Refresh
Self
Refresh
Exit
L
H
H
L
X
L
X
H
X
H
X
X
3
4
Bank Active & Row Addr.
H
X
X
V
Row Addr.
Auto Precharge Disable
L
H
L
H
4
4,5
4
4,5
6
7
7
Read &
Column Addr. Auto Precharge Enable
Auto Precharge Disable
Write &
Column Addr. Auto Precharge Enable
Burst Stop
Bank Selection
Precharge
Both Banks
H
X
L
H
L
H
X
V
Column
Addr.
H
X
L
H
L
L
X
V
Column
Addr.
H
X
L
H
H
L
X
X
V
X
L
H
H
X
L
L
H
L
X
X
L
H
X
L
H
L
H
H
X
X
H
X
V
X
X
H
X
H
X
H
X
X
H
X
V
X
H
X
X
H
X
V
X
Entry
H
L
X
Clock Suspend or
Active Power Down
Exit
L
H
X
X
Entry
H
L
X
Precharge Power Down Mode
Exit
L
H
X
X
DQM
H
V
X
L
H
L
X
H
X
H
X
H
X
L
X
No Operation Command
H
X
X
X
Deep Power Down Entry
Deep Power Down Exit
H
L
L
H
X
X
X
X
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)
Note :
1. OP Code : Operand Code
A0~A10/AP,BA : Program keys. (@MRS)
2. MRS can be issued only at both banks precharge state.
A new command can be issued after 2 clock cycle of MRS.
3. Auto refresh functions as same as CBR refresh of DRAM.
The automatical precharge without Row precharge command is meant by “Auto”.
Auto/Self refresh can be issued only at both precharge state.
4. BA : Bank select address.
If “Low” at read, write, Row active and precharge, bank A is selected.
If “High” at read, write, Row active and precharge, bank B is selected.
If A10/AP is “High” at Row precharge, BA is ignored and both banks are selected.
5. During burst read or write with auto precharge, new read write command cannot be issued.
Another bank read write command can be issued at every burst length.
6. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0),
but makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)
7. After Deep Power Down mode exit, a full new initialization of the memory device is mandatory.
相關(guān)PDF資料
PDF描述
A43E06161V-95F 512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95U 512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95UF 512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06321G-75F General Purpose
A43E06321G-75UF 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A43E06161V-95F 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95U 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E06161V-95UF 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM
A43E0616G-75I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
A43E0616G-95I 制造商:AMICC 制造商全稱(chēng):AMIC Technology 功能描述:1M X 16 Bit X 4 Banks Synchronous DRAM
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