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參數(shù)資料
| 型號： | A43E06161V-75F |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | Switch Guard; For Use With:2 Position Toggle Switches; Features:MIL-G-7703 Approved, MS25224-1; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Accessory Type:Switch Guard RoHS Compliant: No |
| 中文描述： | 為512k × 16位× 2銀行同步DRAM |
| 文件頁數(shù)： | 28/46頁 |
| 文件大小： | 1289K |
| 代理商： | A43E06161V-75F |
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A43E06161
PRELIMINARY (July, 2005, Version 0.1)
27
AMIC Technology, Corp.
Page Write Cycle at Different Bank @Burst Length=4
High
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
CKE
CS
RAS
CAS
ADDR
BA
Row Active with
(A-Bank)
Write
(A-Bank)
: Don't care
RAa
CAa
A10/AP
CBb
Write
(B-Bank)
Row Active
(B-Bank)
RBb
CAc
RAa
RBb
WE
DBb1
DBb0
DAa0 DAa1
DAa2
DAa3
DBb2
DBb3
DAc0
DAc1
Write
(A-Bank)
Precharge
(Both Banks)
DQM
DQ
t
CDL
DBd0
DBd1
*Note 2
CBd
t
RDL
*Note 1
Write
(B-Bank)
* Note:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and precharge banks must be the same.
相關PDF資料 |
PDF描述 |
|---|---|
| A43E06161V-75U | 512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-75UF | 512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-95 | Switch Guard; For Use With:2 Position Toggle Switches; Features:Flush Mount; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Accessory Type:Switch Guard RoHS Compliant: No |
| A43E06161V-95F | 512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-95U | 512K X 16 Bit X 2 Banks Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| A43E06161V-75U | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-75UF | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-95 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-95F | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM |
| A43E06161V-95U | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:512K X 16 Bit X 2 Banks Synchronous DRAM |
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