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參數(shù)資料
| 型號： | A29L160ATM-70 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 2米x 8位/ 1米× 16位CMOS 3.3伏只，引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 17/42頁 |
| 文件大小： | 572K |
| 代理商： | A29L160ATM-70 |
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A29L160A Series
(May, 2005, Version 0.1)
16
AMIC Technology, Corp.
START
Write Erase
Command
Sequence
Data Poll
from System
Data = FFh
Erasure Completed
Yes
Embedded
Erase
algorithm in
progress
Note :
1. See the appropriate Command Definitions table for erase
command sequences.
2. See "I/O
3
: Sector Erase Timer" for more information.
No
Figure 4. Erase Operation
The system can monitor I/O
3
to determine if the sector erase
timer has timed out. (See the " I/O
3
: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final
WE
pulse in the command sequence.
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O
7
, I/O
6
, or I/O
2
. Refer to "Write
Operation Status" for information on these status bits.
4 illustrates the algorithm for the erase operation. Refer to
the
Erase/Program
Operations
Characteristics" section for parameters, and to the Sector
Erase Operations Timing diagram for timing waveforms.
tables
in
the
"AC
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or
program data to, any sector not selected for erasure. This
command is valid only during the sector erase operation,
including the 50
μ
s time-out period during the sector erase
command sequence. The Erase Suspend command is
ignored if written during the chip erase operation or
Embedded Program algorithm. Writing the Erase Suspend
command during the Sector Erase time-out immediately
terminates the time-out period and suspends the erase
operation. Addresses are "don't cares" when writing the
Erase Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum of
20
μ
s to suspend the erase operation. However, when the
Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out
period and suspends the erase operation.
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all
sectors selected for erasure.) Normal read and write timings
and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on I/O
7
- I/O
0
. The system can use I/O
7
, or I/O
6
and I/O
2
together, to
determine if a sector is actively erasing or is erase-
suspended. See "Write Operation Status" for information on
these status bits.
After an erase-suspended program operation is complete,
the system can once again read array data within non-
suspended sectors. The system can determine the status of
the program operation using the I/O
7
or I/O
6
status bits, just
as in the standard program operation. See "Write Operation
Status" for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.
The system must write the Erase Resume command
(address bits are "don't care") to exit the erase suspend
mode and continue the sector erase operation. Further writes
of the Resume command are ignored. Another Erase
Suspend command can be written after the device has
resumed erasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A29L160ATM-70F | 2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| A29L160ATM-90I | Replaced by PT78NR112,PT78ST112 : 12Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 |
| A29L160ATM-90U | Replaced by PT78ST114,PT78NR114 : 13.9Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE |
| A29L160ATV-90U | Replaced by PT78ST114,PT78NR114 : 13.9Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 |
| A29L160AUM-70 | Replaced by PT78ST114,PT78NR114 : 13.9Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A29L160ATM-70F | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| A29L160ATM-70I | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| A29L160ATM-70IF | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| A29L160ATM-70U | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
| A29L160ATM-70UF | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:2M X 8 Bit / 1M X 16 Bit CMOS 3.3 Volt-only, Boot Sector Flash Memory |
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