參數(shù)資料
型號(hào): A29DL324UV-70
廠商: AMIC Technology Corporation
英文描述: 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4米× 8-Bit/2M x 16位),3.0伏的CMOS只,同時(shí)作業(yè)快閃記憶體
文件頁數(shù): 36/46頁
文件大小: 556K
代理商: A29DL324UV-70
A29DL324 Series
PRELIMINARY (May, 2002, Version 0.0)
36
AMIC Technology, Inc.
Timing Waveform for Dual Operation
Address
(Input)
BA1
Input
BA2
BA1
BA2
BA1
BA2
Output
Input
Output
Status
Output
t
RC
t
WC
t
RC
t
WC
t
RC
t
WC
t
AS
t
AH
t
ACC
t
CEPH
t
AHT
t
AS
t
DF
t
DF
t
CE
t
OE
t
OEH
t
WP
t
GHWL
t
DH
t
DS
CE
(Input)
OE
(Input)
WE
(Input)
I/O
(Input / Outpu)
Timing Waveform for Write Cycle (
WE
Controlled)
Addresses
(Input)
CE
(Input)
OE
(Input)
WE
(Input)
I/O (Input / Output)
555H
PA
D
OUT
I/O
7
Data Polling
Note :
1. This timing waveform shows the last two write cycles among the program command sequence's four write cycles, and data polling.
2. This timing waveform shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode.
See Table 8. Command Sequence.
3. PA : Program address
PD : Program data
I/O
7
: The output of the complement of the data written to the device.
D
OUT
: The output of the data written to the device.
t
BPG
or
t
WPG
t
AS
t
WC
t
WP
t
CS
t
WPH
t
DH
PA
3rd and 4th write cycle
t
AH
t
RC
PD
A0H
D
OUT
t
CE
t
OE
t
OH
t
GHWL
t
CH
t
DS
相關(guān)PDF資料
PDF描述
A29DL324TG-90 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324UG-90 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324TG-80 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL324UG-80 32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
A29DL324 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
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