
A29DL324 Series 
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 
Preliminary
   4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode) 
Features 
n
 Two bank organization enabling simultaneous execution of 
erase / program and read 
n
 Bank organization: 2 banks (16 Mbits + 16 Mbits) 
n 
Memory organization:  
- 4,194,304 words x
8 bits (BYTE mode) 
- 2,097,152 words x
16 bits (WORD mode) 
n 
Sector organization:  
71 sectors (8 Kbytes / 4 Kwords × 8 sectors, 64 Kbytes / 
32 Kwords × 63 sectors)  
n 
2 types of sector organization 
 - T type: Boot sector allocated to the highest address 
(sector)  
- B type: Boot sector allocated to the lowest address 
(sector) 
n 
3-state output 
n 
Automatic program 
- Program suspend / resume 
n 
Unlock bypass program 
n 
Automatic erase 
- Chip erase 
- Sector erase (sectors can be combined freely) 
n 
Erase suspend / resume 
n 
Program / Erase completion detection 
- Detection through data polling and toggle bits 
- Detection through RY/
BY
 pin 
PRELIMINARY      (May, 2002, Version 0.0) 
1 
AMIC Technology, Inc.
n 
Sector group protection 
- Any sector group can be protected 
 - Any protected sector group can be temporary 
unprotected 
n 
Sectors can be used for boot application 
n 
Hardware reset and standby using 
RESET
  pin 
n 
Automatic sleep mode 
n 
Boot block sector protect by 
WP
 (ACC) pin 
n 
Conforms to common flash memory interface (CFI) 
n 
Extra One Time Protect Sector provided 
Part No. 
Access 
time 
(Max.) 
90ns 
Operating 
supply 
voltage 
2.7V~ 
3.6V 
Power supply current 
(Active mode) 
(Max.) 
16mA 
Standby 
current  
 (Max.) 
5
 A 
A29DL324 
30mA 
n 
Operating ambient temperature: -40 to 85°C 
n 
Program / erase time 
- Program: 9.0 μs / byte (TYP.) 
11.0 μs / word (TYP.) 
- Sector erase: 0.7 s (TYP.) 
n 
Number of program / erase: 1,000,000 times (MIN.) 
n 
Package options 
- 
48-pin TSOP (I) or 63-ball TFBGA 
General Description
The A29DL324 is a flash memory organized of 33,554,432 
bits and 71 sectors. Sectors of this memory can be erased 
at a low voltage (2.7 to 3.6 V) supplied from a single power 
source, or the contents of the entire chip can be erased. 
Two modes of memory organization, BYTE mode 
(4,194,304 words × 8 bits) and WORD mode (2,097,152 
words × 16 bits), are selectable so that the memory can be 
programmed in byte or word units. 
The A29DL324 can be read while its contents are being 
erased or programmed. The memory cell is divided into two 
banks. While sectors in one bank are being erased or 
programmed, data can be read from the other bank thanks 
to the simultaneous execution architecture. The banks are 
8 Mbits and 24 Mbits. 
This flash memory comes in two types. The T type has a 
boot sector located at the highest address (sector) and the 
B type has a boot sector at the lowest address (sector). 
Because the A29DL324 enables the boot sector to be 
erased, it is ideal for storing a boot program. In addition, 
program code that controls the flash memory can be also 
stored, and the program code can be programmed or 
erased without the need to load it into RAM. Eight small 
sectors for storing parameters are provided, each of which 
can be erased in 8 Kbytes units. 
Once a program or erase command sequence has been 
executed, an automatic program or automatic erase 
function internally executes program or erase and 
verification automatically. 
Because the A29DL324 can be electrically erased or 
programmed by writing an instruction, data can be 
reprogrammed on-board after the flash memory has been 
installed in a system, making it suitable for a wide range of 
applications.