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參數(shù)資料
| 型號(hào)： | A29DL163UV-120 |
| 廠商： | AMIC Technology Corporation |
| 英文描述： | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 16兆位（2米x 8-Bit/1M x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體 |
| 文件頁(yè)數(shù)： | 17/47頁(yè) |
| 文件大小： | 738K |
| 代理商： | A29DL163UV-120 |
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A29DL16x Series
PRELIMINARY
(September, 2004, Version 0.0)
16
AMIC Technology, Corp.
Table 9. System Interface String
Addresses
(Word Mode)
1Bh
Addresses
(Byte Mode)
36h
Data
Description
0027h
VCC Min. (write/erase)
I/O
7
-
I/O
4
: volt, I
/O
3
-
I/O
0
: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
I/O
7
-
I/O
4
: volt, I
/O
3
-
I/O
0
: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2
N
μ
s
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
1Fh
3Eh
0004h
20h
40h
0000h
21h
42h
000Ah
22h
44h
0000h
23h
46h
0005h
24h
48h
0000h
25h
4Ah
0004h
26h
4Ch
0000h
Table 10 Device Geometry Definition
Addresses
(Word Mode)
27h
Addresses
(Byte Mode)
4Eh
Data
Description
0015h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0002h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification)
31h
32h
33h
34h
62h
64h
66h
68h
001Eh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
40h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information
39h
3Ah
3BH
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
相關(guān)PDF資料 |
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| A29DL163UV-70 | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL163UV-80 | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL163UV-90 | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL164TV-80 | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL164TG-120 | 16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A29DL163UV-70 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL163UV-80 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL163UV-90 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL164 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL164TG-120 | 制造商:AMICC 制造商全稱:AMIC Technology 功能描述:16 Megabit (2M x 8-Bit/1M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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