參數(shù)資料
型號: A29-1
元件分類: 放大器
英文描述: 10 MHz - 1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: TO-8, 4 PIN
文件頁數(shù): 1/2頁
文件大小: 364K
代理商: A29-1
Cascadable Amplifier
10 to 1500 MHz
A29-1/ SMA29-1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V3
1
Electrical Specifications: Z0 = 50
, VCC = +15 VDC
Parameter
Units
Typical
Guaranteed
25C
0 to 50C
-54 to +85C*
Frequency
MHz
10-1600
10-1500
Small Signal Gain (min)
dB
9.0
8.5
7.5
Gain Flatness (max)
dB
±0.2
±0.5
±1.0
Reverse Isolation
dB
14
Noise Figure (max)
dB
5.5
6.5
7.0
Power Output
@ 1 dB comp. (min)
dBm
22.0
20.0
19.0
IP3
dBm
+32
IP2
dBm
+49
Second Order Harmonic IP
dBm
+57
VSWR Input / Output (max)
1.6:1 / 1.6:1
1.9:1 / 1.9:1
2.0:1 / 2.0:1
DC Current @ 15 Volts (max)
mA
90
94
99
Features
HIGH OUTPUT POWER: +22 dBm (TYP.)
HIGH THIRD ORDER I.P.: +32 dBm (TYP.)
Description
The A29-1 RF amplifier is a discrete thin film hybrid design, which
incorporates the use of thin film manufacturing processes for
accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. An active DC biasing network is used for temperature-
stable performance, in addition to an RF Choke, used for power
supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed,
and MIL-STD-883 environmental screening is available
.
Product Image
Ordering Information
Part Number
Package
A29-1
TO-8
SMA29-1
Surface Mount
CA29-1
SMA Connectorized
Absolute Maximum Ratings
Parameter
Absolute
Maximum
Storage Temperature
-62C to +125C
Case Temperature
+125C
DC Voltage
+17 V
Continuous Input Power
15.5 dBm
Short Term Input power
(1 minute max.)
100 mW
Peak Power (3 sec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125C
Thermal Data: VCC = +15 VDC
Parameter
Rating
Thermal Resistance θjc
100C/W
Transistor Power Dissipation Pd
0.966 W
Junction Temperature Rise
Above Case Tjc
+96C
* Over temperature performance limits for part number CA29-1, guaranteed from 0
oC to +50oC only.
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