- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51263 > A20M18LVFR 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | A20M18LVFR |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 156K |
| 代理商： | A20M18LVFR |
050-5906
Rev
A
5-2004
APT20M18B2VFR
A20M18LVFR
200V 100A
0.018
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 50A)
Zero Gate Voltage Drain Current (V
DS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current 6 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.018
250
1000
±100
24
APT20M18B2VFR_LVFR
200
100
400
±30
±40
625
5.00
-55 to 150
300
100
50
3000
G
D
S
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
T-MAX or TO-264 Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
POWER MOS V FREDFET
FAST RECOVERY BODY DIODE
T-MAX
TO-264
B2VFR
LVFR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20M18B2VFR | 100 A, 200 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT20M22JVR | 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M34SFLL | 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M34BFLL | 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT20M34BFLLG | 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A20M18LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET |
| A20MB | 制造商:Farnell / Pro-Power 功能描述:ADAPTOR FEMALE 20MM 制造商:pro-power 功能描述:ADAPTOR, FEMALE, 20MM |
| A-20MHZ-20-3RD | 制造商:Raltron Electronics Corporation 功能描述: |
| A20MIC 3M269XA DISC 12" | 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 類別:工具 >> 光纖和配件 系列:Trizact™, 269XA MSDS 材料安全數(shù)據(jù)表:8234 MSDS 標準包裝:10 系列:* |
| A20MIC 3M269XA DISC 8" | 功能描述:LAPPING FILM ALUM OXIDE 269XA RoHS:是 類別:工具 >> 光纖和配件 系列:Trizact™, 269XA MSDS 材料安全數(shù)據(jù)表:8234 MSDS 標準包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。