參數(shù)資料
型號: A160CT15VF
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 40/52頁
文件大?。?/td> 614K
代理商: A160CT15VF
38
Am29SL160C
21635C5 January23,2007
D A T A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See
“Erase And Programming Performance” on page 46
for more information.
Parameter
Speed Options
JEDEC
Std.
Description
-100
-120
-150
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
50
60
70
ns
t
DVWH
t
DS
Data Setup Time
Min
50
60
70
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
50
60
70
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Notes 1, 2)
Byte
Typ
10
μs
Word
Typ
12
Accelerated Program Operation, Byte or Word
(Note 2)
Typ
8
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
t
VCS
V
CC
Setup Time
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
200
ns
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A160CT15VI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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