參數(shù)資料
型號(hào)： A160CB15VI
廠(chǎng)商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位），1.8伏的CMOS只超低電壓快閃記憶體
文件頁(yè)數(shù)： 27/52頁(yè)
文件大小： 614K
代理商： A160CB15VI
January23,2007 21635C5
Am29SL160C
25
D A T A S H E E T
After the erase operation is suspended, the system can
read array data from or program data to any sector not
selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Normal read and write
timings and command definitions apply. Reading at any
address within erase-suspended sectors produces
status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. See
“Write
Operation Status” on page 27
for information on these
status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See
“Write Operation Status” on page 27
for
more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See
“Autoselect Command Sequence”
on page 22
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device resumes erasing.
Notes:
1. See
Table 12, on page 26
for erase command sequence.
2. See
“DQ3: Sector Erase Timer” on page 29
for more in-
formation.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFH
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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PDF描述
A160CT15VD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT15VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT15VI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB10VC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB10VD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A160CT10VC 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VD 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VF 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VI 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT12VC 制造商:AMD 制造商全稱(chēng):Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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