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參數(shù)資料
| 型號： | A160CB10VC |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個(gè)M x 16位），1.8伏的CMOS只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 18/52頁 |
| 文件大?。?/td> | 614K |
| 代理商： | A160CB10VC |
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16
Am29SL160C
21635C5 January23,2007
D A T A S H E E T
The primary method requires V
ID
on the RESET# pin
only, and is implemented either in-system or via pro-
gramming equipment.
Figure 1, on page 17
shows the
algorithms and
Figure 24, on page 43
shows the timing
diagram. This method uses standard microprocessor
bus cycle timing. For sector unprotect, all unprotected
sectors must first be protected prior to the first sector
unprotect write cycle.
The alternate method intended only for programming
equipment requires V
ID
on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices. Pub-
lication number 21622 contains further details. Contact
an AMD representative to request the document con-
taining further details.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See
“Autoselect Mode” on page 14
for
details.
Write Protect (WP#)
The write protect function provides a hardware method
of protecting certain boot sectors without using V
ID
.
This function is one of two provided by the WP#/ACC
pin.
If the system asserts V
IL
on the WP#/ACC pin, the
device disables program and erase functions in the two
“outermost” 8 Kbyte boot sectors independently of
whether those sectors were protected or unprotected
using the method described in
“Sector/Sector Block
Protection and Unprotection” on page 15
. The two out-
ermost 8 Kbyte boot sectors are the two sectors
containing the lowest addresses in a bottom-boot-con-
figured device, or the two sectors containing the
highest addresses in a top-boot-configured device.
If the system asserts V
IH
on the WP#/ACC pin, the
device reverts to whether the two outermost 8 Kbyte
boot sectors were last set to be protected or unpro-
tected. That is, sector protection or unprotection for
these two sectors depends on whether they were last
protected or unprotected using the method described
in
“Sector/Sector Block Protection and Unprotection”
on page 15
.
Note that if the system asserts V
HH
on the WP#/ACC
pin, all sectors, including the two outermost sectors,
are unprotected. V
HH
is intended for accelerated in-
system programming of the device during system pro-
duction. It is advisable, therefore, not to assert V
HH
on
this pin after the system has been placed in the field for
use. If faster programming is desired, the system may
use the unlock bypass program command sequence.
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the
RESET# pin to V
ID
. During this mode, formerly pro-
tected sectors can be programmed or erased by
selecting the sector addresses. Once V
ID
is removed
from the RESET# pin, all the previously protected
sectors are protected again.
Figure 2, on page 18
shows the algorithm, and
Figure 22, on page 42
shows
the timing diagrams, for this feature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A160CB10VD | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB10VF | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB10VI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB12VC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB12VD | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A160CB10VD | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB10VF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB10VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB12VC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB12VD | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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