參數(shù)資料
型號: A1220LUA-T
廠商: Allegro Microsystems Inc
文件頁數(shù): 10/16頁
文件大?。?/td> 347K
描述: IC HALL EFFECT LATCH 3V 3-SIP
產(chǎn)品培訓模塊: Current Sensor
標準包裝: 4,000
傳感范圍: 40G 跳閘,-40G 釋放
類型: 雙極卡鎖
電源電壓: 3 V ~ 24 V
電流 - 電源: 4mA
電流 - 輸出(最大): 25mA
輸出類型: 數(shù)字式,開漏極
特點: 穩(wěn)壓電壓
工作溫度: -40°C ~ 150°C
封裝/外殼: 3-SIP
供應商設備封裝: 3-SIP
包裝: 散裝
其它名稱: 620-1446
A1220LUA-T-ND
Chopper Stabilized Precision Hall Effect Latches
A1220, A1221,
A1222, and A1223
10
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
C
BYP
A122x
VOUT
GND
0.1 糉
VCC
Output
R
L
V
S
Operation
The output of these devices switches low (turns on) when a mag-
netic field perpendicular to the Hall element exceeds the operate
point threshold, B
OP
 (see panel A of figure 1). After turn-on, the
output voltage is V
OUT(SAT)
. The output transistor is capable of
sinking current up to the short circuit current limit, I
OM
, which is
a minimum of 30 mA. When the magnetic field is reduced below
the release point, B
RP
 , the device output goes high (turns off).
The difference in the magnetic operate and release points is the
hysteresis, B
HYS ,
 of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external
mechanical vibration and electrical noise.
Removal of the magnetic field will leave the device output
latched on if the last crossed switchpoint is B
OP
, or latched off if
the last crossed switch point is B
RP
.
Powering-on the device in the hysteresis range (less than B
OP
 and
higher than B
RP
) will give an indeterminate output state. The cor-
rect state is attained after the first excursion beyond B
OP
 or B
RP
.
Applications
It is strongly recommended that an external bypass capacitor be
connected (in close proximity to the Hall element) between the
supply and ground of the device to reduce both external noise
and noise generated by the chopper stabilization technique. As is
shown in panel B of figure 1, a 0.1 糉 capacitor is typical.
Extensive applications information for Hall effect devices is
available in:
" Hall-Effect IC Applications Guide, Application Note 27701
" Guidelines for Designing Subassemblies Using Hall-Effect 
Devices, Application Note 27703.1
" Soldering Methods for Allegros Products  SMT and Through-
Hole, Application Note 26009
All are provided in Allegro Electronic Data Book, AMS-702, and
the Allegro Web site, www.allegromicro.com.
Figure 1. Switching behavior of latches. In panel A, on the horizontal axis, the B+ direction indicates increasing south polarity magnetic field strength,
and the B direction indicates decreasing south polarity field strength (including the case of increasing north polarity). This behavior can be exhibited
when using a circuit such as that shown in panel B.
(A)
(B)
Functional Description
B
HYS
V
CC
V
OUT(SAT)
B+
B
V+
0
0
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