參數(shù)資料
型號： 9S12DT128DGV2D
廠商： Motorola, Inc.
英文描述： MC9S12DT128 Device User Guide V02.09
中文描述： MC9S12DT128設(shè)備的用戶手冊V02.09
文件頁數(shù)： 100/138頁
文件大?。?/td> 2083K
代理商： 9S12DT128DGV2D
MC9S12DT128 Device User Guide — V02.09
100
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table A-2 ESD and Latch-up Test Conditions
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE:
Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T
A
and the junction temperature T
J
. For power dissipation
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Ohm
Storage Capacitance
C
100
pF
Number of Pulse per pin
positive
negative
–
–
3
3
Machine
Series Resistance
R1
0
Ohm
Storage Capacitance
C
200
pF
Number of Pulse per pin
positive
negative
–
–
3
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table A-3 ESD and Latch-Up Protection Characteristics
Num
C
Rating
Symbol
Min
Max
Unit
1
C Human Body Model (HBM)
V
HBM
2000
–
V
2
C Machine Model (MM)
V
MM
200
–
V
3
C Charge Device Model (CDM)
V
CDM
500
–
V
4
C
Latch-up Current at 125
°
C
positive
negative
I
LAT
+100
–100
–
mA
5
C
Latch-up Current at 27
°
C
positive
negative
I
LAT
+200
–200
–
mA
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