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| 型號： | 9BSE55 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 9BSE55 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
9BSE55
55 Watts, 25 Volts
CELLULAR 850-960 MHz
GENERAL DESCRIPTION
The 9BSE55 is a COMMON BASE, silicon bipolar transistor capable of
providing 55 watts of output power at 960 MHz. The device is designed for
cellular base station applications in the 850 to 960 MHz frequency range.
Gold metallization and emitter ballasting provide a highly reliable and rugged
device which can be used for driver stages or in the output stage of an
amplifier.
CASE OUTLINE
55CW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C1 135 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 50 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 8.0 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
1
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg2
η
c2
VSWR2
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 900 MHz
Vcc = 25 Volts
55
8.9
60
9.3
55
7.0
4.4:1
Watts
Watts
dB
%
BVebo
BVces
Ccb
h
FE
θ
jc
Voltage Emitter to Base
Voltage Collector to Emitter
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 15 mA
Ic = 50 mA
Ic = 3 mA, Vce = 5V
4.0
50
10
50
1.3
Volts
Volts
pF
C/W
o
Note 1: Tc = 25
(
C unless otherwise noted
Note 2: At Rated Output Power
Initial Issue March 1995
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