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| 型號(hào)： | 97SD3248 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | RESISTOR WW POWER 700 OHM 5W |
| 中文描述： | 的1.5Gb SDRAM的8梅格X 48位× 4，銀行 |
| 文件頁(yè)數(shù)： | 36/40頁(yè) |
| 文件大?。?/td> | 584K |
| 代理商： | 97SD3248 |
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97SD3248
M
em
o
ry
5
All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
1.5Gb (8-Meg X 48-Bit X 4-Banks) SDRAM
02.04.05 Rev 3
TABLE 5. AC Electrical Characteristics
(V
CC =3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
SUBGROUPS
MIN
TYPICAL
MAX
UNIT
System clock cycle time1
(CAS latency = 2)
(CAS latency = 3)
t
CK
9, 10, 11
10
7.5
ns
CLK high pulse width1,7
t
CKH
9, 10, 11
2.5
ns
CLK low pulse width1,7,
t
CKL
9, 10, 11
2.5
ns
Access time from CLK1,2
(CAS latency = 2)
(CAS latency = 3)
t
AC
9, 10, 11
6
ns
Data-out hold time1,2,3
t
OH
9, 10, 11
2.7
ns
CLK to Data-out low impedance1,2,3,7
t
LZ
9, 10, 11
2
ns
CLK to Data-out high impedance1,47,
(CAS latency = 2, 3)
t
HZ
9, 10, 11
5.4
ns
Input setup time1,5,6
t
AS, tCS,
t
DS, tCES
9, 10, 11
1.5
ns
CKE setup time for power down exit1
t
CESP
9, 10, 11
1.5
ns
Input hold time1,6
t
AH, tCH, tDH
t
CEH
9, 10, 11
1.5
ns
Ref/Active to Ref/Active command period1
t
RC
9, 10, 11
70
ns
Active to Precharge command period1
t
RAS
9, 10, 11
50
120000
ns
Active command to column command 1
(same bank)
t
RCD
9, 10, 11
20
ns
Precharge to Active command period1
t
RP
9, 10, 11
20
ns
Write recovery or data-in to precharge lead time1
t
DPL
9, 10, 11
20
ns
Active( a) to Active (b) command period1
t
RRD
9, 10, 11
20
ns
Transition time(rise and fall)7
t
T
9, 10, 11
1
5
ns
Refresh Period
t
REF
9, 10, 11
16
6.4
ms
@ 105 °C32
168
@ 85 °C64
@ 70 °C
128
1. AC measurement assumes t
T=1ns. Reference level for timing of input signals is 1.5V.
2. Access time is measured at 1.5V.
3. t
LZ(min) definesthe time at which the outputs achieve the low impedance state.
4. t
HZ(min) defines the time at which the outputs achieve the high impedance state.
5. tCES defines CKE setup time to CLK rising edge except for the power down exit command.
6. t
AS/tAH: Address, tCS/tCH: /RAS, /CAS, /WE, DQM
7. Guarenteed by design (Not tested).
8. Guarenteed by Device Charactreization Testing. (Not 100% Tested)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 97SD3248_06 | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks |
| 97SD3248RPQE | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks |
| 97SD3248RPQH | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks |
| 97SD3248RPQI | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks |
| 97SD3248RPQK | 制造商:MAXWELL 制造商全稱(chēng):Maxwell Technologies 功能描述:1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks |
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