參數(shù)資料
型號： 97SD3232
廠商： Maxwell Technologies, Inc
英文描述： 1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
中文描述： 1千兆內(nèi)存8梅格× 32位× 4，銀行
文件頁數(shù)： 37/39頁
文件大?。?/td> 764K
代理商： 97SD3232
97SD3232
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
1 Gb (8-Meg X 32-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
Pin Functions:
CLK (INPUT PIN): CLK is the master clock input to this pin. The other input signals are referred at CLK rising
edge.
CS 1-4 (INPUT PINS): When CS 1-4 are low, the command input cycle becomes valid. When CS 1-4 are High,
all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held.
RAS, CAS AND WE (INPUT PINS): Although these pin names are the same as those of conventional DRAMs,
they function in a different way. These pins define operation commands (read, write, etc.) depending on the
combination of their voltage levels.
A0 TO A12 (INPUT PINS): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active
command cycle CLK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read
or write command cycle CLK rising edge. And this column address becomes burst access start address.
A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks are pre-
charged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0/BA1
(BS) is pre charged.
BA0/BA1 (INPUT PINS): BA0/BA1 are bank select signals (BS). The memory array of the 97SD3232 is divided
into bank 0, bank 1, bank 2 and bank 3. The 97SD3232 contains 8192-row X 1024-column X 48-bit. If BA0
and BA1 is Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and
BA1 is Low, bank 2 is selected. If BAO is High and BA1 is High, bank 3 is selected.
CKE 1-4 (INPUT PIN): This pin determines whether or not the next CLK is valid. If CKE 1-4 is High, the next
CLK rising edge is valid. If CKE 1-4 is Low, the next CLK rising edge is invalid. This pin is used for power-
down mode, clock suspend mode and self refresh mode1.
DQM 1-4 (INPUT PINS): DQM 1-4 control input/output buffers
Read operation: If DQM 1-4 are High, the output buffer becomes High-Z. If the DQM 1-4 are Low, the output
buffer becomes Low-Z. ( The latency of DQM 1-4 during reading is 2 clock cycles.)
Write operation: If DQM 1-4 are High, the previous data is held ( the new data is not written). If the DQM 1-4
areLow, the data is written. ( The latency of DQM 1-4 during writing is 0 clock cycles.)
DQ0 TO DQ31 (DQ PINS): Data is input to and output from these pins ( DQ0 to DQ31).
V
CC AND VCCQ (POWER SUPPLY PINS): 3.3V is applied. ( VCC is for the internal circuit and VCCQ is for the output
buffer.)
V
SS AND VSSQ (POWER SUPPLY PINS): Ground is connected. (VSS is for the internal circuit and VSSQ is for the
output buffer.)
1. Self refresh mode should only be used at temperatures below 70°C.
相關(guān)PDF資料
PDF描述
97SD3240RPQE 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
97SD3240RPQH 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
97SD3240RPQI 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
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97SD3240 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
97SD3232RPME 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
97SD3232RPMH 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
97SD3232RPMI 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
97SD3232RPMK 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
97SD3240 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
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