參數(shù)資料
型號(hào): 94MT120KB
元件分類: 晶閘管
英文描述: 90 A, 1200 V, SCR
封裝: INT-A-PAK-12
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 158K
代理商: 94MT120KB
54-94-104MT..KB Series
3
Bulletin I27504 08/97
www.irf.com
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
V
INS
RMS isolation voltage
4000
V
T
J
= 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt
Max. critical rate of rise
500
V/s
T
J
= T
J
max., linear to 0.67 V
DRM,
of off-state voltage (*)
gate open circuit
Blocking
(*) Available with dv/dt = 1000V/s, to complete code add S90 i.e. 104MT160KBS90.
Triggering
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
P
GM
Max. peak gate power
10
W
T
J = TJ max.
P
G(AV)
Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GT
Max. peak negative
10
V
gate voltage
V
GT
Max. required DC gate
4.0
V
TJ = - 40°C Anodesupply=6V,resistiveload
voltage to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
I
GT
Max. required DC gate
270
TJ = - 40°C Anodesupply=6V,resistiveload
current to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
0.25
V
@ T
J
= T
J
max., ratedV
DRM
applied
that will not trigger
I
GD
Max. gate current
6
mA
that will not trigger
Thermal and Mechanical Specifications
Parameter
54MT.KB 94MT.KB 104MT.KB Units Conditions
T
J
Max. junction operating
-40 to 125
°C
temperature range
T
stg
Max. storage temperature
-40 to 125
°C
range
RthJC Max. thermal resistance,
0.52
0.39
0.34
K/W
DC operation per single AC switch
junction to case
1.05
0.77
0.69
DC operation per junction
0.56
0.40
0.36
180° Sine cond. angle per single AC switch
1.12
0.80
0.72
180° Sine cond. angle per junction
R
thCS
Max. thermal resistance,
0.03
K/W
Per module
case to heatsink
Mounting surface smooth, flat and greased
T
Mounting
to heatsink
4 to 6
Nm
torque ± 10%
to terminal
3 to 4
wt
Approximate weight
225
g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
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