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參數(shù)資料
| 型號(hào)： | 94A46 |
| 英文描述： | Two-Bit Phototransistors |
| 中文描述： | 雙位光敏 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 94A46 |
MID-94A46
Optical-Electrical Characteristics
Parameter
@ T
A
=25
o
C
Unit
Test Conditions
I
c
=100
μ
A
Symbol
Min.
Typ .
Max.
Collector-Emitter
Breakdown Voltage
Ee=0
Emitter-Collector
Ie=100
μ
A
Ee=0
Breakdown Voltage
Collector-Emitter
I
c
=0.5 mA
Ee=0.1mW/cm
2
V
R
=5V, R
L
=1K
I
C
=1mA
V
CE
=10V
Saturation Voltage
Rise Time
Tr
-
10
-
Fall Time
Tf
-
10
-
Collector Dark
Current
Ee=0
On State Collector
V
CE
=5V
Ee=0.1mW/cm
2
Current
Typical Optical-Electrical Characteristic Curves
02/04/2002
I
C(ON)
-
-
-
-
-
-
-
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
I
CEO
30
nA
-
V
V
0.16
5
mA
100
0.4
0.1
0.4
V
μ
S
Unity Opto Technology Co., Ltd.
0.001
0.01
0.1
1
10
100
1000
0
40
80
120
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
Vce = 5 V
Ee = 0.1 mW/cm
2
@
λ
= 940 nm
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
0.0
0.4
0.8
1.2
1.6
2.0
0
0.1
Ee - Irradiance - mW/cm
2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0.2
0.3
0.4
0.5
0.6
Vce = 5 V
0
4
8
12
16
20
0
2
4
6
8
10
R
L
- Load Resistance - K
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
I
μ
A
I
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
T
R
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