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參數(shù)資料
| 型號： | 93LCS56I/SM |
| 元件分類： | PROM |
| 英文描述： | 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.207 INCH, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 93LCS56I/SM |
93LCS56/66
DS11181E-page 2
2004 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
1.1
Maximum Ratings*
VCC...................................................................................7.0V
All inputs and outputs w.r.t. VSS ............... -0.6V to VCC +1.0V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-65°C to +125°C
Soldering temperature of leads (10 seconds) ............. +300°C
ESD protection on all pins................................................4 kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
CS
Chip Select
CLK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
VSS
Ground
PE
Program Enable
PRE
Protect Register Enable
VCC
Power Supply
TABLE 1-2:
DC AND AC ELECTRICAL CHARACTERISTICS
VCC = +2.5V to +6.0V
Commercial(C): Tamb = 0°C to +70°C
Industrial (I):
Tamb = -40°C to +85°C
Parameter
Symbol
Min
Max
Units
Conditions
High level input voltage
VIH
2.0
VCC +1
V
VCC
≥ 2.5V
Low level input voltage
VIL
-0.3
0.8
V
VCC
≥ 2.5V
Low level output voltage
VOL1—
0.4
V
IOL = 2.1 mA; VCC = 4.5V
VOL2—
0.2
V
IOL = 100
A; VCC = 2.5V
High level output voltage
VOH12.4
—
V
IOH = -400
A; VCC = 4.5V
VOH2VCC-0.2
—
V
IOH = -100
A; VCC = 2.5V
Input leakage current
ILI
-10
10
AVIN = 0.1V to VCC
Output leakage current
ILO
-10
10
AVOUT = 0.1V to Vcc
Pin capacitance
(all inputs/outputs)
CIN, COUT
—7
pF
VIN/VOUT = 0V (Note 1 & 2)
Tamb = +25°C; FCLK = 1 MHz
Operating current
ICC Write
—
3
mA
FCLK = 2 MHz; VCC = 3.0V (Note 2)
ICC Read
—
1
500
mA
A
FCLK = 2 MHz; VCC = 6.0V
FCLK = 1 MHz; VCC = 3.0V
Standby current
ICCS
—100
30
A
CLK = CS = 0V; VCC = 6.0V
CLK = CS = 0V; VCC = 3.0V
DI = PE = PRE = VSS
Clock frequency
FCLK
—2
1
MHz
VCC
≥ 4.5V
VCC < 4.5V
Clock high time
TCKH
250
—
ns
Clock low time
TCKL
250
—
ns
Chip select setup time
TCSS
50
—
ns
Relative to CLK
Chip select hold time
TCSH
0
—
ns
Relative to CLK
Chip select low time
TCSL
250
—
ns
PRE setup time
TPRES
100
—
ns
Relative to CLK
PE setup time
TPES
100
—
ns
Relative to CLK
PRE hold time
TPREH
0
—
ns
Relative to CLK
PE hold time
TPEH
500
—
ns
Relative to CLK
Data input setup time
TDIS
100
—
ns
Relative to CLK
Data input hold time
TDIH
100
—
ns
Relative to CLK
Data output delay time
TPD
—
400
ns
CL=100 pF
Data output disable time
TCZ
—
100
ns
CL=100 pF (Note 2)
Note 1: This parameter is tested at Tamb = 25°C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
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