<input id="ns4dq"><sup id="ns4dq"></sup></input>
<wbr id="ns4dq"><span id="ns4dq"><tr id="ns4dq"></tr></span></wbr>
<label id="ns4dq"><td id="ns4dq"></td></label>
  • <ins id="ns4dq"><noframes id="ns4dq"></noframes></ins>
    <pre id="ns4dq"></pre>
    參數(shù)資料
    型號: 93LC66BX-I/ST
    元件分類: PROM
    英文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    封裝: 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8
    文件頁數(shù): 28/30頁
    文件大?。?/td> 550K
    代理商: 93LC66BX-I/ST
    2008 Microchip Technology Inc.
    DS21795D-page 7
    93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
    2.4
    Erase
    The ERASE instruction forces all data bits of the speci-
    fied address to the logical ‘1’ state. CS is brought low
    following the loading of the last address bit. This falling
    edge of the CS pin initiates the self-timed program-
    ming cycle, except on ‘93C’ devices where the rising
    edge of CLK before the last address bit initiates the
    write cycle.
    The DO pin indicates the Ready/Busy status of the
    device if CS is brought high after a minimum of 250 ns
    low (TCSL). DO at logical ‘0’ indicates that programming
    is still in progress. DO at logical ‘1’ indicates that the
    register at the specified address has been erased and
    the device is ready for another instruction.
    Note:
    Issuing a Start bit and then taking CS low
    will clear the Ready/Busy status from DO.
    FIGURE 2-1:
    ERASE TIMING FOR 93AA AND 93LC DEVICES
    FIGURE 2-2:
    ERASE TIMING FOR 93C DEVICES
    CS
    CLK
    DI
    DO
    TCSL
    Check Status
    11
    1
    AN
    AN-1
    AN-2
    A0
    TSV
    TCZ
    Busy
    Ready
    High-Z
    TWC
    High-Z
    CS
    CLK
    DI
    DO
    TCSL
    Check Status
    11
    1
    AN
    AN-1
    AN-2
    A0
    TSV
    TCZ
    Busy
    Ready
    High-Z
    TWC
    High-Z
    相關(guān)PDF資料
    PDF描述
    93C66B-E/PG 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
    93C66A-E/SN 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8
    93C66BXT-E/SNG 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    93C66C-E/ST 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    93C66BX-E/MC 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    93LC66BXT/SN 功能描述:電可擦除可編程只讀存儲器 256x16 Rot Pin RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    93LC66BXT-E/SN 功能描述:電可擦除可編程只讀存儲器 256x16 Rot Pin RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    93LC66BXT-E/SNG 功能描述:電可擦除可編程只讀存儲器 256x16 Rot Pin Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    93LC66BXT-I/SN 功能描述:電可擦除可編程只讀存儲器 256x16 Rot Pin RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    93LC66BXT-I/SNG 功能描述:電可擦除可編程只讀存儲器 256x16 Rot Pin Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8