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參數(shù)資料
| 型號： | 93LC66B-I/OT |
| 元件分類： | PROM |
| 英文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 封裝： | ROHS COMPLIANT, PLASTIC,SOT-23, 6 PIN |
| 文件頁數(shù)： | 30/30頁 |
| 文件大?。?/td> | 550K |
| 代理商： | 93LC66B-I/OT |
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2008 Microchip Technology Inc.
DS21795D-page 9
93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C
2.6
Erase/Write Disable and Enable
(EWDS/EWEN)
The 93XX66A/B/C powers up in the Erase/Write
Disable (EWDS) state. All Programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or Vcc is removed from the device.
To protect against accidental data disturbance, the
EWDS
instruction can be used to disable all erase/write
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent of
both the EWEN and EWDS instructions.
FIGURE 2-5:
EWDS TIMING
FIGURE 2-6:
EWEN TIMING
2.7
Read
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string. The output data bits will toggle on
the rising edge of the CLK and are stable after the
specified time delay (TPD). Sequential read is possible
when CS is held high. The memory data will
automatically cycle to the next register and output
sequentially.
FIGURE 2-7:
READ TIMING
CS
CLK
DI
10
00
0
x
x
TCSL
1x
CS
CLK
DI
00
1
x
TCSL
CS
CLK
DI
DO
11
0
An
A0
High-Z
0
Dx
D0
Dx
D0
Dx
D0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93LC66AX-E/SN | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93AA66B-I/SN | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C66CXT-E/SN | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66AX-I/SN | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66BT-I/SNVAO | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC66B-SN | 制造商:Microchip Technology Inc 功能描述: |
| 93LC66BT/SN | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66BT/ST | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66BT-E/MNY | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K, 256 X 16 SERIAL EE,EXT RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66BT-E/MS | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256x16 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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