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參數(shù)資料
| 型號： | 93LC66A/SM |
| 元件分類： | PROM |
| 英文描述： | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 226K |
| 代理商： | 93LC66A/SM |
93LC66A/B
DS21209C-page 6
1998 Microchip Technology Inc.
3.6
ERASE/WRITE Disable and Enable
(EWDS/EWEN)
The 93LC66A/B powers up in the ERASE/WRITE Dis-
able (EWDS) state. All programming modes must be
preceded by an ERASE/WRITE Enable (EWEN)
instruction. Once the EWEN instruction is executed,
programming remains enabled until an EWDS instruc-
tion is executed or Vcc is removed from the device. To
protect against accidental data disturbance, the EWDS
instruction can be used to disable all ERASE/WRITE
functions and should follow all programming opera-
tions. Execution of a READ instruction is independent
of both the EWDS and EWEN instructions.
3.7
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (93LC66A) or 16-bit
(93LC66B) output string. The output data bits will tog-
gle on the rising edge of the CLK and are stable after
the specified time delay (TPD). Sequential read is pos-
sible when CS is held high. The memory data will auto-
matically cycle to the next register and output
sequentially.
FIGURE 3-4:
EWDS TIMING
FIGURE 3-5:
EWEN TIMING
FIGURE 3-6:
READ TIMING
CS
CLK
DI
10
00
0
X
X
TCSL
1X
CS
CLK
DI
00
1
X
TCSL
CS
CLK
DI
DO
11
0
An
A0
HIGH-Z
0Dx
D0
Dx
D0
Dx
D0
相關(guān)PDF資料 |
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| 93LC66BT/SN | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
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| 93LC66BT/SNA21 | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC66BXT-I/MSG | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C66AX-E/MSG | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC66AT/SN | 功能描述:電可擦除可編程只讀存儲器 512x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66AT/ST | 功能描述:電可擦除可編程只讀存儲器 512x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66AT-E/MNY | 功能描述:電可擦除可編程只讀存儲器 4K 512X8 SER EE,EXT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66AT-E/MS | 功能描述:電可擦除可編程只讀存儲器 512x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC66AT-E/MSG | 功能描述:電可擦除可編程只讀存儲器 512x8 Lead Free Package RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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