參數(shù)資料
型號(hào): 93LC46B-ISM
廠商: Microchip Technology Inc.
元件分類: EEPROM
英文描述: 1K 2.5V Microwire Serial EEPROM
中文描述: 一千2.5V的微型導(dǎo)線串行EEPROM
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 203K
代理商: 93LC46B-ISM
93LC46A/B
DS21173D-page 2
Preliminary
1997 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
Vcc...................................................................................7.0V
All inputs and outputs w.r.t. Vss ................-0.6V to Vcc +1.0V
Storage temperature .....................................-65
Ambient temp. with power applied.................-65
Soldering temperature of leads (10 seconds).............+300
ESD protection on all pins................................................4 kV
°
°
C to +150
C to +125
°
°
°
C
C
C
*Notice:
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
Stresses above those listed under “Maximum ratings” may
TABLE 1-1
PIN FUNCTION TABLE
Name
Function
CS
CLK
DI
DO
V
SS
NC
V
CC
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
No Connect
Power Supply
TABLE 1-2
DC AND AC ELECTRICAL CHARACTERISTICS
All parameters apply over the specified
operating ranges unless otherwise
noted
Commercial (C):
Industrial (I):
V
V
CC
CC
= +2.5V to +6.0V
= +2.5V to +6.0V
Tamb = 0
Tamb = -40
°
C to +70
°
C to +85
°
C
°
C
Parameter
Symbol
Min.
Max.
Units
Conditions
High level input voltage
V
IH
1
2.0
Vcc +1
V
2.7V < V
CC
5.5V (Note 2)
V
IH
2
0.7 V
CC
Vcc +1
V
V
CC
< 2.7V
Low level input voltage
V
IL
1
-0.3
0.8
V
V
CC
> 2.7V (Note 2)
V
IL
2
-0.3
0.2 Vcc
V
V
CC
< 2.7V
Low level output voltage
V
OL
1
0.4
V
I
OL
= 2.1 mA; Vcc = 4.5V
μ
A; Vcc = Vcc Min.
= -400
μ
A; Vcc = 4.5V
= -100
μ
A; Vcc = Vcc Min.
= V
SS
to Vcc
V
OL
2
0.2
V
I
OL
=100
High level output voltage
V
OH
1
2.4
V
I
OH
V
OH
2
V
CC
-0.2
V
μ
μ
I
OH
Input leakage current
I
LI
-10
10
A
V
IN
Output leakage current
I
LO
-10
10
A
V
OUT
= V
SS
to Vcc
Pin capacitance
(all inputs/outputs)
C
IN
, C
OUT
7
pF
V
Tamb = +25
IN
/V
OUT
= 0 V (Notes 1 & 2)
°
C, F
CLK
= 1 MHz
Operating current
I
CC
write
1.5
mA
I
CC
read
1
500
mA
μ
A
μ
A
MHz
MHz
F
F
CLK
CLK
= 2 MHz; Vcc = 6.0V
= 1 MHz; Vcc = 3.0V
Standby current
I
CCS
1
CS = Vss
Clock frequency
F
CLK
2
1
V
V
CC
CC
> 4.5V
< 4.5V
Clock high time
T
CKH
250
ns
Clock low time
T
CKL
250
ns
Chip select setup time
T
CSS
50
ns
Relative to CLK
Chip select hold time
T
CSH
0
ns
Relative to CLK
Chip select low time
T
CSL
250
ns
Data input setup time
T
DIS
100
ns
Relative to CLK
Data input hold time
T
DIH
100
ns
Relative to CLK
Data output delay time
T
PD
400
ns
C
L
= 100 pF
Data output disable time
T
CZ
100
ns
C
L
= 100 pF (Note 2)
Status valid time
T
SV
500
ns
C
L
= 100 pF
Program cycle time
T
WC
6
ms
ERASE/WRITE mode
T
EC
6
ms
ERAL mode
T
WL
15
ms
WRAL mode
°
C, V
Endurance
1M
cycles
25
CC
= 5.0V, Block Mode (Note 3)
Note 1:
This parameter is tested at Tamb = 25
This parameter is periodically sampled and not 100% tested.
This application is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total
Endurance Model which may be obtained on Microchip’s BBS or website.
°
C and Fclk = 1 MHz.
2:
3:
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