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參數(shù)資料
| 型號： | 93LC46A-ST |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | EEPROM |
| 英文描述： | 1K 2.5V Microwire Serial EEPROM |
| 中文描述： | 一千2.5V的微型導(dǎo)線串行EEPROM |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 222K |
| 代理商： | 93LC46A-ST |
93LC46/56/66
DS11168L-page 8
1997 Microchip Technology Inc.
3.8
WRITE
The WRITE instruction is followed by 8 bits (or by 16
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin, CS
must be brought low before the next rising edge of the
CLK clock. This falling edge of CS initiates the self-
timed auto-erase and programming cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (T
CSL
) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another instruc-
tion.
The WRITE cycle takes 4 ms per word (Typical).
3.9
Write All (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
The WRAL cycle is completely self-timed and com-
mences at the falling edge of the CS. Clocking of the
CLK pin is not necessary after the device has entered
the self clocking mode. The WRAL command does
include an automatic ERAL cycle for the device. There-
fore, the WRAL instruction does not require an ERAL
instruction, but the chip must be in the EWEN status.
The WRAL instruction is guaranteed at V
CC
= +4.5V to
+6.0V.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (T
CSL
).
The WRAL cycle takes 30 ms maximum (16 ms typical).
FIGURE 3-7:
WRITE TIMING
FIGURE 3-8:
WRAL TIMING
CLK
CS
T
CSL
0
1
DI
BUSY
D0
A
1
A0
Dx
READY
T
WC
DO
TRI-STATE
n
STANDBY
TRI_STATE
CLK
CS
T
CSL
0
1
DI
BUSY
D0
X
0
X
Dx
READY
T
WL
DO
0
1
TRI-STATE
TRI-STATE
STANDBY
Guarantee at Vcc = +4.5V to +6.0V.
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| 93LC46A | 1K 2.5V Microwire Serial EEPROM |
| 93LC46B | 1K 2.5V Microwire Serial EEPROM |
| 93LC46B-IP | 1K 2.5V Microwire Serial EEPROM |
| 93LC46B-ISM | 1K 2.5V Microwire Serial EEPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93LC46AT-/SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Serial EEPROM |
| 93LC46AT/SN | 功能描述:電可擦除可編程只讀存儲器 128x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93LC46AT-/SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Serial EEPROM |
| 93LC46AT/SN-CUT TAPE | 制造商:Microchip 功能描述:93LC46 Series 1 Kbit (128 x 8) 5.5 V Microwire Compatible Serial EEPROM - SOIC-8 |
| 93LC46AT/ST | 功能描述:電可擦除可編程只讀存儲器 128x8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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